Simulation analysis of strong electromagnetic pulse rise time on damage threshold of RS flip-flop
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摘要: 对RS触发器中金属-氧化物-半导体场效应管（MOSFET）的烧毁作用进行研究,通过仿真分析在不同入射端口、不同上升时间的条件下RS触发器的损伤阈值,结合其内部温度分布图完成失效机理分析,进而得出对于上升时间长的强电磁脉冲,需要更高的峰值场强、更长的时间才能将RS触发器烧毁。Abstract: This paper investigates the thermal run away mechanism of metal oxide semiconductor field effect transistors (MOSFETs) in RS triggers. Simulations are performed to study the RS trigger damage threshold under different gate input and rising time, and the internal temperature distribution is plotted. Through the analysis, this paper concludes that the strong electromagnetic pulses with longer rise time should have higher peak intensity and longer time to damage RS triggers.
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Key words:
- rise time /
- RS flip-flop /
- electromagnetic pulse /
- damage threshold /
- failure mechanism
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