Abstract: Accurate high-frequency noise model of nanoscale MOSFET is essential for the low-power design of millimeter-wave integrated circuit. However, the existing high-frequency drain-current noise models do not consider the effect of device substrate and gate resistance, and the dependence of frequency and bias. To solve this problem, based on the physical characteristics of nanoscale MOSFET devices and considering the drift-diffusion equation and the effective gate overdrive, this paper proposes unified drain noise models to characterize the frequency and bias dependence from the strong reverse region to the weak region. The models are effective to the application to advanced design system(ADS) simulation design by predicting the dependency of frequency and bias accurately. The simulation results of the model are compared with the experimental results to verify the accuracy of the model. At the same time, this paper compares the practicability of the models for two different process devices of 130 nm and 40 nm MOSFETs, and verifies that the millimeter-wave noise characteristic of the 40 nm MOSFET is superior.