High speed IGBT gate driving circuit applied to pulsed power system
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摘要: 根据绝缘栅双极型晶体管(IGBT)的工作特性，研究设计了一种应用于脉冲功率系统的开关驱动电路，实现了IGBT的快速开通。阐述了驱动电路的原理，设计了基于平面变压器的驱动电路，在驱动芯片基础上为栅极提供幅值为60 V脉冲电压，提高开关速度。最后使用Blumlein双线结构对驱动电路的性能进行了实验验证。应用这种驱动方式，提高了集电极电流上升速率。实验结果表明，在1000 V的工作电压下，通过IGBT的脉冲电流达到了470.53 A，脉冲前沿为40 ns，di/dt达到9.41 A/ns，相比数据手册提供的数据，该电流上升速度提高了7.53倍，实现了对IGBT的快速驱动。Abstract: Based on the performance characteristics of Insulated Gate Bipolar Translator(IGBT), a new type of switch driving circuit for pulsed power system has been designed. The switch turns on quickly with this driving circuit. The principle of this driving circuit is elaborated, and the circuit based on transformer is designed to offer gate pulses voltage as high as 60 V, so that switching speed can be improved. The driving circuit and pulse forming network are simulated by software. Meanwhile, experiment confirms this strategy using pulse forming network in Blumlein construction. By this strategy of driving, both pulse current through IGBT and the current slope are improved. Extended results of the performance of driving circuit are presented, which show that, the peak current is 470.53 A and the current slope is 9.41 A/ns at the voltage of 1 kV. The target of high-speed gate driving is achieved, and the current slope is 7.53 times the data given by the datasheet.
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Key words:
- IGBT /
- gate drive /
- current slope /
- planar transformer /
- pulsed power system
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表 1 实验结果对照
Table 1. Results of experiments
gate voltage/V (di/dt)/(A·ns-1) 15(suggested by datasheet) 1.25 24 5.73 48 7.58 60 9.41 
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