组合脉冲内间隔对限幅器热损伤效应的影响

王明; 马弘舸

doi:10.11884/HPLPB201830.170426

组合脉冲内间隔对限幅器热损伤效应的影响

doi: 10.11884/HPLPB201830.170426

王明^{1, 3,},
马弘舸^{1, 2}

1.
中国工程物理研究院应用电子学研究所, 高功率微波技术重点实验室, 四川绵阳 621900
2.
中国工程物理研究院复杂电磁环境重点实验室, 四川绵阳 621900
3.
中国工程物理研究院研究生院, 北京 100088

详细信息

作者简介:
王明(1992—), 男，硕士研究生，从事高功率微波效应研究；rygb@163.com

中图分类号: TN385
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- 被引次数: 0
出版历程
- 收稿日期: 2017-11-01
- 修回日期: 2017-12-18
- 刊出日期: 2018-06-15

Influence of pulse interval on thermal damage process of PIN limiter

Wang Ming^{1, 3
,},
Ma Hongge^{1, 2}

1.
Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang 621900, China
2.
Complicated Electromagnetic Environment Laboratory, CAEP, Mianyang 621900, China
3.
Graduate School of China Academy of Engineering Physics, Beijing 100088, China

摘要

摘要: 基于物理模型法研究PIN限幅器二极管的微波脉冲热效应，研究了间隔1~20 ns的两个微波脉冲构成的组合脉冲与单个长脉冲对于器件峰值温度的影响。仿真结果表明：带有间隔的组合脉冲相对于长脉冲温升更明显，不同型号二极管的最佳时间间隔不同，与I层厚度成正相关的作用。分析了脉冲间隔的热效应机理，是载流子恢复引起下一个脉冲的尖峰泄漏加速升温，以及P区温度升高使得本征载流子浓度增加引起电热正反馈共同作用的结果。
- PIN限幅器 /
- 组合脉冲 /
- 热损伤 /
- 器件仿真
Abstract: Based on the device physics simulation, focusing on the influence of pulse interval on thermal damage process of PIN limiter, the peak temperature of combined pulses with different pulse interval from 1 to 20 ns is studied. Numerical simulation results show that the pulse interval in which the device temperature rises most has a positive relationship with intrinsic region thickness. The thermal breakdown mechanism is analyzed. It is the spike leakage of the second sub-pulse that makes the temperature rise speed up. And the high temperature of the P-type region also causes the electrothermal feedback which makes it easier to get higher temperature.
- PIN limiter /
- combined pulse /
- thermal damage /
- microwave pulse

HTML全文

图 1 PIN器件烧毁过程中Ⅰ区热产生率

Figure 1. Heat generation intrinsic region in burnout process of PIN diode

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图 2 仿真中PIN限幅器电路图

Figure 2. Circuit of PIN diode limiter in simulation

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图 3 PIN二极管载流子掺杂分布

Figure 3. Dopping profile of PIN diode

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图 4 PIN限幅器瞬态输入波形

Figure 4. Transient input of PIN limiter

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图 5 不同Ⅰ层厚度的二极管脉冲间隔与峰值温度变化

Figure 5. Pulse interval vs device peak temperature in different PIN limiter

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图 6 不同Ⅰ层厚度的二极管与最佳脉冲间隔的关系

Figure 6. Thickness of intrinsic region vs best pulse interval

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图 7 脉冲参数不同脉冲间隔与峰值温度变化

Figure 7. Pulse interval vs device peak temperature at different voltage and pulse width

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图 8 第一个脉冲作用后限幅器内部温度分布的变化情况

Figure 8. Temperature profile of PIN limiter after the first microwave pulse

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参考文献(8)

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