数百千伏电压下杆箍缩二极管模拟

屈俊夫; 马勋; 赵娟; 李洪涛

doi:10.11884/HPLPB201830.170432

数百千伏电压下杆箍缩二极管模拟

doi: 10.11884/HPLPB201830.170432

屈俊夫^{1, 2,},
马勋¹,
赵娟¹,
李洪涛^1, ,

1.
中国工程物理研究院流体物理研究所, 四川绵阳 621900
2.
中国工程物理研究院研究生院, 四川绵阳 621999

基金项目:

中国工程物理研究院流体物理研究所发展基金项目 SFZ20150202

详细信息

作者简介:
屈俊夫(1993—), 男，硕士研究生，从事脉冲功率及闪光X光机研究; qujf12@lzu.edu.cn

通讯作者:
李洪涛(1968—)，男，博士，研究员，从事脉冲功率技术研究; lht680526@21cn.com

中图分类号: O434
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- 被引次数: 0
出版历程
- 收稿日期: 2017-11-03
- 修回日期: 2018-01-14
- 刊出日期: 2018-05-15

Simulation of rod-pinch diode at hundreds of thousands of volts

Qu Junfu^{1, 2
,},
Ma Xun¹,
Zhao Juan¹,
Li Hongtao^{1
, ,}

1.
Institute of Fluid Physics, CAEP, Mianyang 621900, China
2.
Graduate School of China Academy of Engineering Physics, Mianyang 621999, China

摘要

摘要: 为了探索杆箍缩二极管(RPD)在冲击加载下物质低密度区成像应用中的可行性，开展了低电压(≤500 kV)运行条件下RPD箍缩物理特性模拟研究。基于Particle-in-cell(PIC)模拟方法，从二极管加载电压幅值、阴极盘厚度、阴阳电极孔径比等方面开展了二极管模拟，从电子箍缩效率、质子流、电子利用率、电场和磁场分布等角度对箍缩物理过程进行了分析。模拟表明：低电压运行条件下普通结构二极管电流较低，不能为电子提供足够的磁场力从而导致较低的电子箍缩效率；采用组合杆结构，并优化阳极杆到轫致辐射靶区的过渡区设计，是在低电压条件下实现小焦斑、高剂量辐射光源的值得探索的技术途径。
- 杆箍缩二极管 /
- PIC模拟 /
- 闪光照相 /
- 箍缩效率 /
- 辐射成像
Abstract: In order to explore the feasibility of low density imaging of rod pinch diode (RPD) under impact loading, a simulation study on physical properties of RPD under low voltage operation (≤500 kV) is carried out. Based on particle-in-cell (PIC) simulation method, a simulation is carried out on amplitude of loading voltage of diode, thickness of cathode plate, aperture ratio of cathode and anode, etc. The physical process of pinch is analyzed according to the angle of electron pinch efficiency, proton flow, electron utilization, electric field and magnetic field distribution. The simulation results show that the current of RPD is low under low voltage operation, and can't provide enough magnetic force for the electron, resulting in low electron pinch efficiency. It is a technical approach to realize high dose and small focal spot light source under low voltage condition by using composite rod-pinch diode and optimizing design of the transition region of anode rod to bremsstrahlung target region.
- rod-pinch diode /
- PIC simulation /
- flash radiography /
- pinch efficiency /
- radiation imaging

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图 1 杆箍缩二极管结构示意图

Figure 1. Structure of rod-pinch diode

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图 2 杆箍缩二极管简化模型

Figure 2. Simplified model of rod-pinch diode

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图 3 发射面距离分布示意图

Figure 3. Sketch map of distance distribution of launching surface

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图 4 E_z沿阴极盘上下游发射面分布图(场强值正负仅代表方向)

Figure 4. Distribution of E_z along the cathode panel

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图 5 组合式杆箍缩二极管简化模型

Figure 5. Simplified model of composite rod-pinch diode

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图 6 钨杆电子分布图

Figure 6. Electron distribution pattern of tungsten rod

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图 7 直接过渡阳极杆模型

Figure 7. Model of anode with direct transition

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表 1 峰值电压对电子箍缩影响的模拟结果

Table 1. Simulated influence of peak voltage on the pinch process

voltage/MV	total current/A	proton current/A	proton current ratio/%	electron current of tip/A	pinch efficiency/%	electron utilization rate/%
0.10	1 992.54	98.30	4.93	447.69	22.47	23.63
0.20	5 639.03	433.01	7.68	2 058.09	36.50	39.53
0.30	8 344.14	867.37	10.40	3 340.06	40.03	44.67
0.40	10 697.93	1 582.46	14.79	5 685.94	53.15	62.38
0.50	12 909.94	2 286.52	17.71	7 055.76	54.65	66.42
0.80	19 729.17	4 961.93	25.15	12 952.09	65.65	87.71
1.20	28 994.01	8 825.76	30.44	19 764.02	68.17	98.00
2.00	48 026.66	17 201.69	35.82	30 617.14	63.75	99.33
3.00	72 542.22	29 250.44	40.32	42 672.25	58.82	98.57

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表 2 不同发射面的箍缩结果

Table 2. Results of different emission surface

position	electron current of anode/A	electron current of tip/A	electron utilization rate/%
central surface	6 466.67	3 529.74	32.76
upstream surface	1 563.32	920.92	8.55
downstream surface	2 744.71	2 572.93	23.88

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表 3 不同距离发射面的箍缩效率

Table 3. Pinch efficiency of emission surfaces at different distances

position	electron current of anode/A	electron current of tip/A	electron utilization rate/%
central surface	6 466.67	3 529.74	54.58
0~5 mm	2 551.53	1 891.37	74.13
5~10 mm	633.37	614.15	96.97
10~15 mm	380.30	337.99	88.87
others	704.04	631.63	89.71

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表 4 不同厚度阴极盘的箍缩效率

Table 4. Pinch efficiency of cathode at different thickness

thickness of cathode/mm	total current/A	proton current/A	electron current of anode/A	electron current of tip/A	pinch efficiency/%
1	10 376.21	1 344.14	9 032.07	5 865.90	56.53
3	10 697.93	1 582.46	9 115.47	5 685.94	53.15
6	10 678.08	1 753.06	8 925.02	5 583.16	52.29

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表 5 不同阳、阴电极孔径比的箍缩效率

Table 5. Pinch efficiency of different aperture ratio of anode and cathode

r_a/r_c	total current/A	proton current/A	proton current radio/%	electron current of tip/A	pinch efficiency/%
1/5	10 697.93	1 582.46	14.79	5 685.94	53.15
3/7	35 391.88	7 029.56	19.86	21 727.15	61.39
6/10	70 214.48	15 973.78	22.75	48 480.16	69.05

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表 6 阳极杆尖1 mm的电子箍缩效率

Table 6. Pinch efficiency of 1 mm anode tip

r_a/r_c	total current/A	proton current/A	proton current ratio/%	electron current of tip of 1 mm/A	pinch efficiency/%
composite rod	48 370.27	4 473.12	9.25	11 356.30	23.48
1/5	10 697.93	1 582.46	14.79	4 702.89	43.96
6/10	70 214.48	15 973.78	22.75	44 261.66	63.04

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表 7 不同长度钨杆的箍缩效率

Table 7. Pinch efficiency of tungsten rod of different length

length of tungsten rod/mm	total current/A	proton current/A	proton current ratio/%	electron current/A	electron current of tip/A	electron current of rod of W/A	pinch efficiency/%	electron utilization rate/%
1	48 370.27	4 473.12	9.25	43 897.15	11 356.30	11 356.30	23.48	25.87
3	51 341.77	5 341.77	10.40	46 000.00	9 640.41	13 803.70	18.78	20.96
5	49 782.90	5 468.99	10.99	44 313.90	8 143.43	12 900.09	16.36	18.38

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表 8 直接过渡组合式二极管的箍缩效率

Table 8. Pinch efficiency of tungsten rod of different length with direct transition anode

length of tungsten rod/mm	total current/A	proton current/A	proton current ratio/%	electron current/A	electron current of tip/A	pinch efficiency/%	electron utilization rate/%
1	62 277.78	8 469.14	13.60	53 808.64	22 209.47	35.66	41.27

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