质子束轰击金属靶面的二次电子效应的模拟研究

孟晓慧; 董志伟

doi:10.11884/HPLPB201830.170498

质子束轰击金属靶面的二次电子效应的模拟研究

doi: 10.11884/HPLPB201830.170498

孟晓慧^1,,
董志伟^2, ,

1.
中国工程物理研究院研究生院, 北京 100088
2.
北京应用物理与计算数学研究所, 北京 100094

详细信息

作者简介:
孟晓慧(1993—)，女，硕士，从事束流物理的研究；narutom0202@163.com

通讯作者:
董志伟(1962—)，男，博士，从事高功率微波，束流互作用等的研究；dong_zhiwei@iapcm.ac.cn

中图分类号: O45
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出版历程
- 收稿日期: 2017-12-11
- 修回日期: 2018-01-26
- 刊出日期: 2018-06-15

Simulation study of secondary electron effect of proton beam bombardment on metallic target surface

Meng Xiaohui^1
,,
Dong Zhiwei^{2
, ,}

1.
Graduate School of China Academy of Engineering Physics, Beijing 100088, China
2.
Institute of Applied Physics and Computational Mathematics, Beijing 100094, China

摘要

摘要: 基于粒子云网格计算方法，对质子束轰击靶面产生二次电子的效应进行了模拟研究，得到了不同电场强度对质子束的品质以及其产生的二次电子的数量的影响。研究表明，50 kV电压下，质子束束腰宽度1.8 mm，并有近10%的质子束打在阴极侧壁上；150 kV电压下，质子束束腰宽度1.2 mm。这说明，抽取电场强度小时质子束分散，其束流品质下降；抽取电场强度大时质子束紧凑。通过调控抽取、加速电压，可以有效地控制到靶质子流的聚散状况，以及由此产生的二次电子的强度及分布。
- 粒子云网格 /
- 紧凑型中子管 /
- 质子束 /
- 二次电子 /
- 加速区间
Abstract: Using the technique of Particle-In-Cell to simulate the secondary electron effect of proton beams bombarding the target surface, we obtained the results of the quality of proton beams and the quantity of secondary electrons affected by the extracted voltage. From which, we find that the width of proton beams' waist is 1.8 mm at 50 kV and 1.2 mm at 150 kV. Therefore, the proton beams become dispersed at lower voltages and compact at higher voltages. Adjusting the extracted voltage between acceleration areas, we can control the quality of proton beams.
- particle-in-cell /
- compact neutron tube /
- proton beam /
- secondary electron /
- voltage effect

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图 1 几何模型

Figure 1. Geometrical model

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图 2 静电场分布

Figure 2. Electrostatic field distribution

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图 3 二次电子发射系数

Figure 3. Secondary electron yield

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图 4 质子在不同阴阳极电势差下的分布

Figure 4. Ion distribution at different voltage

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图 5 不同电压下侧壁和靶面上的质子的吸收电流强度

Figure 5. Current intensity absorbed by side wall and target surface at different voltage

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图 6 二次电子在空间中的分布图

Figure 6. Distribution of secondary electrons

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图 7 靶面产生的二次电子在不同电压下的宏粒子数和电流强度

Figure 7. Macro particle number and current intensity of secondary electrons at different voltage

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图 8 阴极侧壁上产生二次电子在不同电压下的数量和吸收电流强度

Figure 8. Number of macro particle and current intensity of secondary electrons at different voltage

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表 1 不同电势差情况下质子束束斑和束腰宽度

Table 1. Width of beam spot and beam waist at different voltage

voltage/kV	width of beam spot/mm	width of beam waist/mm
150	1.82	1.20
100	2.00	1.50
50	2.00	1.80

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表 2 不同电势差下侧面产生的二次电子的数目及其阳极吸收电流与靶面产生的二次电子的数目及其阳极吸收电流的比值

Table 2. Ratio of side wall and target surface in secondary electrons number and current density absorbed by anode at different voltage

voltage/kV	macro particle number/%	current density/%
150	0.857	12.520
100	2.174	12.520
50	13.350	67.391

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