L型阵列探测器合成功率研究与设计

王红华; 文化锋; 武晴涛; 应祥岳; 李军; 施锋

doi:10.11884/HPLPB201830.180236

L型阵列探测器合成功率研究与设计

doi: 10.11884/HPLPB201830.180236

1.
宁波大学信息科学与工程学院, 浙江宁波 315000
2.
俄勒冈理工学院, 电子工程与可再生能源工程系, 俄勒冈州克拉马斯福尔斯市 97601, 美国

基金项目:

国家自然科学基金项目 61371061

浙江省自然科学基金项目 LY12F01010

宁波市自然科学基金项目 2018A610024

详细信息

作者简介:
王红华(1995-), 女，硕士，主要研究方向为光载无线通信；17815936287@163.com

中图分类号: TN29;O453
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- 文章访问数: 989
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- 被引次数: 0
出版历程
- 收稿日期: 2018-09-15
- 修回日期: 2018-11-26
- 刊出日期: 2018-12-15

Research and design of L-type array detector

1.
Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315000, China
2.
Department of Electrical Engineering and Renewable Energy Engineering, Oregon Institute of Technology, 3201 Campus Drive, Klamath Falls, OR 97601, USA

摘要

摘要: 针对行波探测器阵列只能合成输出功率而不能同时提高工作带宽的现状，基于m推演型滤波电路原理，提出了一种新的L型阵列探测器，即通过在光电二极管之间串联电容减少结电容对截止频率的影响，再与两个电感串联形成单个阵列单元，然后将单个阵列单元级联构成全新的L型滤波器电路结构。结果表明，L型探测器阵列能够对射频输出信号进行功率合成，同时工作带宽提高至67 GHz，相较于传统光电探测器，工作带宽提高两倍。通过增加级联光电二极管的数量，可以持续增大输出功率，同时L型探测器阵列的推演方法可根据实际需求灵活设计出期望的光电探测器，为未来大带宽、高功率的光电探测器设计提供理论基础。
- 行波探测器 /
- 阵列 /
- 滤波电路 /
- 功率合成 /
- 光电探测器
Abstract: For the status quo of traveling wave detector array which can synthesize output power but can't improve work bandwidth, this paper proposes a new L-type array detector. Using a capacitance, a photodiode, and two inductance in series to form a single array unit, the L-type array detector has a cascade cell array structure. The results show that L-type detector can carry on power synthesis of the RF output signal, increaseworking bandwidth to 67 GHz at the same time; Compared with the traditional photoelectric detector, the work bandwidth is tripled. The reasoning method proposed in this paper can be adopted to flexible design of ideal photodiodes, providing a theoretical foundation for future study of photoelectric detectors.
- traveling wave detector /
- array /
- filter circuit /
- power synthesis /
- photodetector

HTML全文

图 1 传统光电探测器内部电路

Figure 1. Internal circuit of traditional photodetector

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图 2 行波探测器工作原理

Figure 2. Schematic diagram of traveling-wave photodetector

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图 3 L型探测器阵列的基本单元

Figure 3. Basic unit of the L-type detector array

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图 4 L型探测器阵列与光路匹配电路图

Figure 4. L-type detector array and optical match circuit diagram

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图 5 结构单元频率响应对比

Figure 5. Contrast diagram of frequency response of structural units

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图 6 结构单元回波损耗对比

Figure 6. Contrast diagram of echo loss of structural units

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图 7 六元TWDA频率响应

Figure 7. Frequency response of six element TWDA

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图 8 不同级联数目L型探测器波特图

Figure 8. Baud chart of L-type detectors of different cascades number

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图 9 六元TWDA负载合成信号波形

Figure 9. Load synthesis signal waveform of six element TWDAs

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图 10 十二元TWDA输出电流波形

Figure 10. Output current waveform schematic of twelve element TWDA

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图 11 不同级联数目L型探测器输出电流图

Figure 11. Output current chart of L-type detectors of different cascades number

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参考文献(14)

[1]	武蓓蕾. 光载无线系统中传输方案与光域微波信号处理技术的研究[D]. 北京: 北京交通大学, 2017: 3-5. Wu Beilei. Research on transmission scheme and microwave signal processing technology in optical-borne wireless system. Beijing: Beijing Jiaotong University, 2017: 3-5
[2]	Shi T, Xiong B, Sun C Z, et al. Applications of high-saturation-current photodiode in the RoF links with low noise figure and high gain[J]. Journal of Optoelectronics Laser, 2013, 24(1): 56-62.
[3]	Yao C. Key technologies of high speed photodiodes[D]. Beijing: Beijing University of Posts and Telecommunications, 2013: 6-12.
[4]	颜强. 高性能光探测器设计与性能测量研究[D]. 北京: 北京邮电大学, 2012: 5-9. Yan Qiang. Research on the design and measurement of high-performance semiconductor photodetector. Beijing: Beijing University of Posts and Telecommunications, 2012: 5-9
[5]	Che X, Zhang Y, Ning J, et al. A low dark current and high responsivity InGaAs/InP pin photodetector[J]. Micronanoelectronic Technology, 2014, 51(4): 214-218.
[6]	胡伟, 豆贤安, 孙晓泉. 强光照射下的InGaAs二极管内部光生载流子分析[J]. 光子学报, 2014, 43(6): 138-142. https://www.cnki.com.cn/Article/CJFDTOTAL-GZXB201406024.htm Hu Wei, Dou Xian'an, Sun Xiaoquan. The analysis of the photo-carriers of the lnGaAs P-I-N photodiode response to the high optical injection. Acta Photonica Sinica, 2014, 43(6): 138-142 https://www.cnki.com.cn/Article/CJFDTOTAL-GZXB201406024.htm
[7]	Khanra S. Traveling wave model of uni-traveling carrier photodiode[C]//International Conference on Optics and Photonics. International Society for Optics and Photonics. 2015: 96541L.
[8]	Shi T, Xiong B, Sun C Z, et al. Applications of high-saturation-current photodiode in the RoF links with low noise figure and high gain[J]. Journal of Optoelectronics Laser, 2013, 24(1): 56-62.
[9]	Meng Q Q, Wang H, Liu C Y, et al. High-photocurrent and wide-bandwidth UTC photodiodes with dipole-doped structure[J]. IEEE Photonics Technology Letters, 2014, 26(19): 1952-1955. doi: 10.1109/LPT.2014.2343260
[10]	Park J W, Han S, Lee D, et al. High-speed traveling-wave photodetector with a 3-dB bandwidth of 410 GHz[J]. ETRI Journal, 2012, 34(6): 942-945. doi: 10.4218/etrij.12.0212.0173
[11]	刘砚涛, 刘玉蓓, 尹伟. LC滤波器设计方法介绍及其仿真特性比较[J]. 电子测量技术, 2010, 33(5): 17-21. https://www.cnki.com.cn/Article/CJFDTOTAL-DZCL201005009.htm Liu Yantao, Liu Yubei, Yin Wei. Introduction of design methods of LC filter and simulation of responding characteristics. Electronic Measurement Technology, 2010, 33(5): 17-21 https://www.cnki.com.cn/Article/CJFDTOTAL-DZCL201005009.htm
[12]	汪弈舟, 吴小林, 黄明, 等. 基于m推演型的500 MHz低通LC滤波器设计[J]. 工业技术创新, 2017, 4(6): 7-10. https://www.cnki.com.cn/Article/CJFDTOTAL-GYJS201706002.htm Wang Yizhou, Wu Xiaolin, Huang Ming, et al. Design of 500 MHz low-pass LC filter based on m-derived type. Industrial Technology Innovation, 2017, 4(6): 7-10 https://www.cnki.com.cn/Article/CJFDTOTAL-GYJS201706002.htm
[13]	Kuo F M, Chou M Z, Shi J W. Linear-cascade near-ballistic unitraveling-carrier photodiodes with an extremely high saturation current-bandwidth product[J]. Journal of Lightwave Technology, 2011, 29(4): 432-438.
[14]	Shi J W, Kuo F M, Wu C J, et al. Extremely high saturation current-bandwidth product performance of a near-ballistic uni-traveling-carrier photodiode with a flip-chip bonding structure[J]. IEEE Journal of Quantum Electronics, 2009, 46(1): 80-86.