大功率脉冲氙灯用稀土钨电极工作表面分析

高志坤; 杨建参; 郝万立; 付宝刚

doi:10.11884/HPLPB201931.180261

大功率脉冲氙灯用稀土钨电极工作表面分析

doi: 10.11884/HPLPB201931.180261

1.
北京工业大学材料科学与工程, 北京 100022
2.
中国工程物理研究院核物理与化学研究所, 四川绵阳 621900

基金项目:

国家自然科学基金创新研究群体项目 51621003

详细信息

作者简介:
高志坤(1992-)，男，硕士，主要从事稀土钨电极方面研究; 1292178935@qq.com

通讯作者:
杨建参(1976-)，男，博士，副研究员，主要从事稀土钨钼热电子发射材料研究; yjcan@bjut.edu.cn

中图分类号: TN245
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- 被引次数: 0
出版历程
- 收稿日期: 2018-10-08
- 修回日期: 2018-12-04
- 刊出日期: 2019-01-15

Surface analysis after working with rare earth tungsten electrode for high-power pulsed Xenon lamp

1.
Materials Science and Engineering, Beijing University of Technology, Beijing 100022, China
2.
Institute of Nuclear Physics and Chemistry, CAEP, Mianyang 621900, China

摘要

摘要: 为探讨电极表面发生变化的原因和烧蚀机理，为提升电极工作稳定性提供理论依据，分析了经过上万发次点灯测试的大功率脉冲氙灯稀土钨电极的表面形貌、元素深度分布及价态。结果表明：工作后的电极表面出现大量裂纹以及烧蚀坑；表面各元素主要由W, La, O三种元素组成，分布均匀；电极表面La以La³⁺形式存在，W存在原子态和+6价两种价态，占比分别为18.29%和81.71%；随刻蚀深度增加后，La的价态仍为+3价，W⁶⁺迅速减少直至W价态全部变为W⁰。
- 稀土钨电极 /
- 表面形貌 /
- 元素分布 /
- 价态
Abstract: The material selected for the experiment is the high power pulsed Xenon lamp rare earth tungsten electrode after operation. Analysis of appearance, element distribution and elemental valence of rare earth tungsten electrode surface and etched at different depths. Experimental results show that: After the work, there were many cracks on the surface of the electrode and ablation pits. The elements on the surface were evenly distributed and consisted of three elements: W, La, and O.The electrode surface La exists in the form of La³⁺, W has two valence states W⁰ and W⁶⁺, where W⁶⁺ accounts for the majority; After the ion etching, the valencestate of La is still La³⁺, W still has two types of W⁰ and W⁶⁺, but W⁰ accounts for the most; After the etching depth increases, the valence state of tungsten becomes W⁰.
- rare earth tungsten electrode /
- surface appearance /
- element distribution /
- valence state

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图 1 工作后电极表面形貌

Figure 1. Image of electrode surface after working

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图 2 SEM扫描面分布图

Figure 2. Image of surface distribution

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图 3 AES扫描图片与元素分析

Figure 3. Image of surface distribution and elemental analysis

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图 4 刻蚀后AES扫面图

Figure 4. Image of AES scanning after etch

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图 5 裂缝处的俄歇图像

Figure 5. Image of AES scanning at crack

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图 6 电极表面XPS全谱

Figure 6. Electrode surface XPS complete spectrum

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图 7 不同位置W4f XPS谱

Figure 7. Image of W4f in difference place

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图 8 电极表面XPS La3d谱

Figure 8. Electrode surface XPS La3d

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图 9 XPS深度剖析曲线图

Figure 9. Image of XPS profile

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表 1 各种元素在标准状态下的刻蚀速率

Table 1. Etching rates of various elements in the standard state

element	sputter rate /(nm/s)
W	0.11
Si	0.22
Fe	0.28
Cu	0.18
Mg	0.7
Mo	0.15
Ta	0.127

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