γ射线作用下氧化铪基MOS结构总剂量效应研究

丁曼

doi:10.11884/HPLPB201931.180330

γ射线作用下氧化铪基MOS结构总剂量效应研究

doi: 10.11884/HPLPB201931.180330

丁曼

河海大学能源与电气学院，南京 211100

基金项目:

国家自然科学基金青年基金项目 51507049

详细信息

作者简介:
丁曼(1986—)，女，讲师，极端环境下电介质损伤机理研究；farry3386@163.com

中图分类号: TM85
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- 被引次数: 0
出版历程
- 收稿日期: 2018-11-19
- 修回日期: 2019-02-21
- 刊出日期: 2019-07-15

Total dose effect of HfO₂ based MOS capacitors under gamma-ray radiation

Ding Man

College of Energy and Electrical Engineering, Hohai University, Nanjing 211100, China

摘要

摘要: 使用原子层淀积方法得到了7.8 nm厚度的HfO₂薄膜并通过直接溅射金属铝电极得到了Al/HfO₂/Si MOS电容结构，测量得到了HfO₂基MOS结构在⁶⁰Co γ射线辐照前后的电容-电压特性，使用原子力显微镜得到了HfO₂薄膜在辐照前后的表面微观形貌，使用X射线光电子能谱方法测量得到了HfO₂薄膜在辐照前后的化学结构变化。研究发现，使用原子层淀积方法制备的HfO₂薄膜表面质量较高；γ射线辐照在HfO₂栅介质中产生了数量级为10¹² cm^-2的负的氧化层陷阱电荷；HfO₂薄膜符合化学计量比，介质内部主要的缺陷为氧空位且随着辐照剂量的增加而增加，说明辐照在介质中引入了陷阱从而导致MOS结构性能的退化。
- 氧化铪 /
- 金属-氧化物-半导体器件 /
- 伽马射线 /
- 电离总剂量效应
Abstract: HfO₂ film with the thickness of 7.8nm is deposited on p type silicon by using atomic layer deposition method, and aluminum is sputtered on top of the HfO₂ film to form Al/HfO₂/Si MOS structure. The surface morphology of HfO₂ is taken by using atomic force microscopy, and the surface quality is approved to be high with low surface roughness and high uniformity. The radiation induced oxide and interface trapped charge density are in the order of 10¹²cm^-2, which is larger than that in SiO₂ with the same equivalent oxide thickness. Moreover, the radiation induced oxide trapped charge density increases with the increase of irradiation total dose, the radiation induced interface trapped charge can be either positive or negative. The chemical structure of the HfO₂ film is measured by XPS and oxygen vacancy is found to be the dominant radiation induced traps inside the film HfO₂.
- hafnium oxide /
- metal-oxide-semiconductor structure /
- gamma-ray /
- total dose effect

HTML全文

图 1 HfO₂薄膜的表面形貌

Figure 1. Surface morphology of HfO₂ film

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图 2 辐照前后MOS结构的CV曲线

Figure 2. CV characteristic of MOS capacitor before and after irradiation

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图 3 HfO₂薄膜表面XPS全谱

Figure 3. XPS result on the surface of HfO₂ film

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图 4 HfO₂薄膜中主要元素的窄谱及分峰结果

Figure 4. Detailed XPS result on the surface of HfO₂

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