4H-SiC探测器的γ辐照影响研究

李正; 吴健; 白忠雄; 吴锟霖; 范义奎; 蒋勇; 尹延朋; 谢奇林; 雷家荣

doi:10.11884/HPLPB201931.180345

4H-SiC探测器的γ辐照影响研究

doi: 10.11884/HPLPB201931.180345

李正^{1, 2,},
吴健^{1, 2},
白忠雄^{1, 2},
吴锟霖^{1, 2},
范义奎^{1, 2},
蒋勇^{1, 2},
尹延朋^{1, 2},
谢奇林^{1, 2},
雷家荣^{1, 2}

1.
中国工程物理研究院核物理与化学研究所, 四川绵阳 621900
2.
中国工程物理研究院中子物理重点实验室, 四川绵阳 621900

基金项目:

中国工程物理研究院科学技术发展基金项目 2015B0103009

国家自然科学基金项目 11605174

国家自然科学基金项目 11775917

国家自然科学基金项目 11775198

详细信息

作者简介:
李正(1994-), 男, 硕士研究生, 从事核探测技术研究, lz54312@163.com

中图分类号: TL816.2
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- 被引次数: 0
出版历程
- 收稿日期: 2018-11-30
- 修回日期: 2019-04-28
- 刊出日期: 2019-08-15

Study of gamma irradiation effect on the 4H-SiC detector

Li Zheng^{1, 2
,},
Wu Jian^{1, 2},
Bai Zhongxiong^{1, 2},
Wu Kunlin^{1, 2},
Fan Yikui^{1, 2},
Jiang Yong^{1, 2},
Yin Yanpeng^{1, 2},
Xie Qilin^{1, 2},
Lei Jiarong^{1, 2}

1.
Institute of Nuclear Physics and Chemistry, CAEP, Mianyang 621900, China
2.
Key Laboratory of Neutron Physics, CAEP, Mianyang 621900, China

摘要

摘要: 为研究4H-SiC探测器的抗γ辐照性能，使用40万Ci级的⁶⁰Co源对4H-SiC探测器进行了数次辐照，累积辐照剂量最大为1 MGy(Si)，并在辐照后对4H-SiC的性能进行了测试。随着累积辐照剂量增加，4H-SiC探测器的正向电流增大，而反向电流恰好相反；根据4H-SiC探测器的正向I-V曲线可提取理想因子和肖特基势垒，理想因子从1.87增加到2.18，肖特基势垒从1.93 V减小至1.69 V；4H-SiC探测器对²⁴¹Am源产生的α粒子进行探测时，探测器的电荷收集率从95.65%退化到93.55%，测得能谱的能量分辨率由1.81%退化到2.32%。4H-SiC探测器在受到1 MGy(Si)的γ辐照后，与未受到辐照时相比，在探测能量为5.486 MeV的α粒子时能量分辨率和电荷收集率仅退化了28.18%和2.2%，仍具备优良的探测性能。
- 4H-SiC探测器 /
- γ辐照 /
- I-V特性 /
- α探测器
Abstract: To investigate 4H-SiC detector’s resistance to gamma irradiation, the detector was irradiated by ⁶⁰Co gamma-ray(about 4×10⁵ Ci), and the maximum cumulative dose was 1 MGy. The detector’s I-V characteristics and its performance in detecting charged particles were tested after gamma irradiation. The forward current increased and the reverse current decreased as the cumulative dose was increased. The ideal factor and Schottky barrier height were extracted from forward I-V curves, and the result showed that ideal factor increased and Schottky barrier height decreased after irradiation. The detector was exposed to ²⁴¹Am source, and it was found that the detector’s performance degraded slightly after gamma irradiation. However, the detector behaved well in detection after it received gamma exposures at a dose of 1 MGy: its charge collection efficiency was 93.55% and its energy resolution was 2.32% in detecting alpha particles of 5.486 MeV. Therefore it has been proved that 4H-SiC detector has good resistance to gamma irradiation.
- 4H-SiC detector /
- gamma irradiation /
- I-V characteristics /
- alpha detector

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图 1 4H-SiC肖特基二极管的结构

Figure 1. Structure of 4H-SiC Schottky diode

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图 2 I-V测试和α能谱测量实验设置

Figure 2. Experiment setup for I-V and α spectrum measurement

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图 3 辐照后4H-SiC探测器的正向I-V曲线

Figure 3. Forward I-V curves of 4H-SiC detector after each irradiation

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图 4 辐照后4H-SiC探测器的反向I-V曲线

Figure 4. Reverse I-V curves of 4H-SiC detector after each irradiation

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图 5 4H-SiC探测器辐照后对²⁴¹Am源的响应

Figure 5. Response to α particles from ²⁴¹Am after each irradiation of 4H-SiC detector

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表 1 辐照后器件的理想因子与肖特基势垒

Table 1. Ideal factor and Schottky barrier height after each irradiation

dose/Gy	n	φ/V
0	1.87	1.93
100	1.89	1.91
1000	1.89	1.91
100 000	1.97	1.81
1 000 000	2.18	1.69

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表 2 α能谱的峰值、半高宽和能量分辨率及探测器的电荷收集率

Table 2. Peak centroid, FWHM, energy resolution of α energy spectra and charge collection efficiency (CCE) of the detector

dose/Gy	peak centroid	FWHM/keV	energy resolution/%	CCE/%
0	977.35	99.40	1.81	95.65
100	970.67	114.87	2.09	95.02
1000	968.27	123.52	2.25	94.79
100 000	963.73	115.15	2.10	94.36
1 000 000	955.23	127.37	2.32	93.55

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