Analysis of RF noise mechanism in strong inversion region nanoscale MOSFET
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摘要: 为了有效地表征纳米MOSFET强反型区下的射频噪声特性，研究了其噪声建模的方法。在分析45 nm MOSFET射频小信号等效电路参数提取结果的基础上，建立了该器件漏极电流噪声的简洁模型。该模型完整地表征了决定45 nm器件噪声机理的三个组成部分：本征漏极电流噪声、栅极管脚寄生电阻热噪声和栅漏衬底寄生电磁耦合噪声。噪声测量在验证所建模型准确性和精度的同时，还表明：45 nm MOSFET的本征漏极电流噪声为受抑制的散粒噪声，并且随着栅源偏压的降低受抑制性逐渐减弱直至消失。Abstract: In order to effectively characterize the RF noise characteristics in the strong inversion region of nanoscale MOSFET, the noise modeling method is studied. Based on the analysis of extracted results of radio frequency small-signal equivalent circuit parameters of 45 nm MOSFET, a compact model for the MOSFET's drain current noise is proposed. This model fully describes three kinds of main physical sources that determine the noise mechanism of 45 nm MOSFET, including intrinsic drain current noise, thermal noise induced by the gate parasitic resistance, and coupling thermal noise induced by substrate parasitic effect. The accuracy of the proposed model is verified by noise measurements, and the intrinsic drain current noise of 45 nm MOSFET is proved to be the suppressed shot noise, and with the decrease of the gate voltage, the suppressed degree gradually decreases until it vanishes.
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图 3 135 nm n-MOSFETs的Sid与IDS关系
Figure 3. Drain current noise Sidvs drain current IDS for 135 nm n-MOSFETs
图 4 45 nm n-MOSFETs在VDS=1.1 V处的Sid与VGS关系
Figure 4. Sid vs grid voltage VGS for 45 nm n-MOSFETs at VDS=1.1 V
图 6 45 nm n-MOSFET在VGS=0.7 V处的Sid与IDS的关系
Figure 6. Sid vs IDS for 45 nm n-MOSFETs at VGS=0.7 V
图 7 45 nm n-MOSFET在VGS=0.35 V处的Sid与IDS的关系
Figure 7. Sid vs IDS for 45 nm n-MOSFETs at VGS=0.35 V
表 1 益于VDS=1.1 V时噪声分析的MOSFET小信号参数的提取结果
Table 1. Extracted results of small-signal parameters of MOSFET that can benefit the noise analysis at VDS=1.1 V
VGS/V Cpg/fF Cpd/fF Cpgd/fF Lg/pH Ld/pH Ls/pH Rg/Ω Rs/Ω Rd/Ω Rb/Ω Cdb/fF Cgb/fF CGS/fF Cgd/fF Cds/fF gm/ms gds/ms PAD parasitic parameters substrate parasitic parameters intrinsic parameters 0.35 8 20 2.1 52.5 20 12 3.98 0.378 0.306 17.6 19.61 2.39 47.18 29.81 4.96 5.65 7.28 0.70 8 20 2.1 52.5 20 12 3.98 0.378 0.306 2.00 20.83 3.19 59.78 30.13 5.09 112.82 17.68 
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表 2 室温(300 K)下本征噪声分析中典型的噪声贡献
Table 2. Typical noise contribution for intrinsic noise analysis at room temperature (300 K)
VGS/V $ \overline{i_{\text{n} R_{\text{g}}}^2} /\left(\text{A}^2 \cdot \text{Hz}^{-1}\right)$ $ \overline{i_{\text{n} b}^2} /\left(\text{A}^2 \cdot \text{Hz}^{-1}\right)$ $ \overline{i_{\text{n d}_{\max }}^2} /\left(\text{A}^2 \cdot \text{Hz}^{-1}\right) $ $ \overline{i_{\text{n d}_{\min }}^2} /\left(\text{A}^2 \cdot \text{Hz}^{-1}\right) $ 0.35 2.10×10-24 4.42×10-25 1.08×10-22 3.33×10-24 0.70 8.39×10-22(max)1.82×10-22(min) 5.63×10-26 1.55×10-21 1.44×10-23
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