一种新型等离子体磁控溅射镀膜电源设计

李波; 赵娟; 李洪涛; 叶超; 谭巍巍; 黄斌; 鲁向阳; 黄宇鹏; 张信; 欧阳艳晶; 康传会; 齐卓筠

doi:10.11884/HPLPB201931.190002

一种新型等离子体磁控溅射镀膜电源设计

doi: 10.11884/HPLPB201931.190002

1.
中国工程物理研究院流体物理研究所, 四川绵阳 621900
2.
北京大学物理学院, 北京 100871

基金项目:

中国工程物理研究院院长基金项目 YZJJLX2016002

详细信息

作者简介:
李波(1986—)，男，从事大电流特种电源研究；lbjoyxnh1057@yeah.net

通讯作者:
赵娟(1968—)，女，高级工程师，从事脉冲功率技术研究；zj680525@21cn.com

中图分类号: TN86
计量
- 文章访问数: 1510
- HTML全文浏览量: 359
- PDF下载量: 151
- 被引次数: 0
出版历程
- 收稿日期: 2019-01-02
- 修回日期: 2019-02-25
- 刊出日期: 2019-04-15

Design of new power source for plasma magnetron sputtering coating

1.
Key Laboratory of Pulsed Power, Institute of Fluid Physics, CAEP, P. O. Box 919-805, Mianyang 621900, China
2.
School of Physics, Peking University, Beijing 100871, China

摘要

摘要: 磁控溅射镀膜电源是磁控溅射系统中的关键设备之一。根据铌靶和锡靶溅射处理装置的技术要求，研制了一套输出电压0~800 V可调、脉冲宽度5~200 μs可调、频率0~60 Hz可调、在脉冲电流最大幅值约150 A的磁控溅射镀膜电源，分别给出了该电源在铌靶负载和锡靶负载下的实验结果。设计上采用高压短脉冲预电离一体化高功率双极性脉冲形成电路方法，解决了高功率磁控溅射在重复频率工作下有时不能成功溅射粒子、电离时刻不一致、溅射起弧打火靶面中毒、溅射效率低等问题，降低了磁控溅射装置内气体的工作气压，实现低气压溅射镀膜，提高了靶材的溅射效率，减小薄膜表面粗糙度。通过大量实验论证，该电源达到了理想的溅射效果，满足了指标要求。
- 高压预电离 /
- 双极性脉冲 /
- 低气压溅射 /
- 等离子体
Abstract: Power source of magnetron sputtering coating is one of the key equipment in magnetron sputtering system. A power supply of magnetron sputtering with adjustable output voltage of 0-800 V, pulse width of 5-200 μs, frequency of 0-60 Hz and maximum pulse current of 150 A is developed according to the technical parameters of the sputtering treatment equipment for niobium and tin targets. The experimental results of the prepared power supply with the niobium target load and tin target load are given respectively. To solve the problems of unsuccessful sputtering of particles, inconsistent ionization time, poisoning of target surface and low sputtering efficiency in high power magnetron sputtering under repetitive frequency operation, a high power bipolar pulse forming circuit integrated with high voltage short pulse preionization is adopted. The gas pressure can realize sputtering coating with low pressure. This design has improved the sputtering efficiency of the target and reduced the surface roughness of the film. The results of experiments show that the prepared power supply achieves the ideal sputtering effect and meets the requirements of the index.
- high voltage preionization /
- bipolar pulse /
- low pressure sputtering /
- plasma

HTML全文

图 1 系统总体结构图

Figure 1. Overall structure of the system

下载: 全尺寸图片幻灯片

图 2 脉冲形成电路原理

Figure 2. Schematic of pulse forming circuit

下载: 全尺寸图片幻灯片

图 3 驱动电路原理

Figure 3. Schematic of driver circuit

下载: 全尺寸图片幻灯片

图 4 输出波形

Figure 4. Output waveforms

下载: 全尺寸图片幻灯片

参考文献(14)

[1]	李春伟, 苗红涛, 徐淑艳, 等. 复合高功率脉冲磁控溅射技术的研究进展[J]. 表面技术, 2016, 45(6): 82-88. https://www.cnki.com.cn/Article/CJFDTOTAL-BMJS201606013.htm Li Chunwei, Miao Hongtao, Xu Shuyan, et al. Research progress of hybrid high power impulse magnetron sputtering. Surface Technology, 2016, 45(6): 82-88 https://www.cnki.com.cn/Article/CJFDTOTAL-BMJS201606013.htm
[2]	Kubinski I J A, Hurkmans T, Trinh T, et al. Perspective for replacement of hard chromium by PVD[J]. Plat Surf Finish, 1999, 86: 20-25.
[3]	Konyashin I Y. PVD/CVD technology for coating cemented carbides[J]. Surface and Coatings Technology, 1995, 71: 277-283. doi: 10.1016/0257-8972(94)02325-K
[4]	Zhao Guojun, Lin Bin, Jiang Bailing, et al. Microstructure and mechanical properties of multilayer Ti(C, N) films by closed-field unbalanced magnetron sputtering ion plating[J]. Journal of Materials Science & Technology, 2010, 26(2): 119-124
[5]	张继成, 吴卫东, 许华, 等. 磁控溅射技术新进展及应用[J]. 材料导报, 2004, 18(4): 56-59. https://www.cnki.com.cn/Article/CJFDTOTAL-CLDB200404016.htm Zhang Jicheng, Wu Weidong, Xu Hua, et al. The recent developments and applications of magnetron sputtering. Material Review, 2004, 18(4): 56-59 https://www.cnki.com.cn/Article/CJFDTOTAL-CLDB200404016.htm
[6]	田民波. 薄膜科学与技术手册[M]. 北京: 机械工业出版社, 1991, 2-5. Tian Minbo. Handbook of membrane science and technology. Beijing: China Machine Press, 1991: 2-5
[7]	Munz W D. Properties of niobium-based wear and corrosion resistant hard PVD coating deposition on various steels[J]. Metal Ital, 2002, 94(11): 25-27.
[8]	田修波, 吴忠振, 石经纬, 等. 高脉冲功率密度复合磁控溅射电源研制及放电特性研究[J]. 真空, 2010, 47(3): 44-47. https://www.cnki.com.cn/Article/CJFDTOTAL-ZKZK201003017.htm Tian Xiubo, Wu Zhongzhen, Shi Jingwei, et al. Development and discharge behavior of high power density pulse magnetron sputtering system. Vacuum, 2010, 47(3): 44-47 https://www.cnki.com.cn/Article/CJFDTOTAL-ZKZK201003017.htm
[9]	Helmerssonl J, Lattemann M, Bohlmark J, et al. Ionized physical vapor deposition (IPVD): A review of technology and applications[J]. Thin Solids Films, 2006, 513(1/2): 1-24.
[10]	Boo J M, Jung M J, Park H K. High-rate deposition of copper thin films using newly designed high-power magnetron sputtering source[J]. Surface and Coatings Technology, 2004, 721-727.
[11]	戴茂飞. 脉冲调制射频磁控溅射电源的研制[D]. 武汉: 中南民族大学, 2012. Dai Maofei. The research on pulse modulation RF power supply for magnetron sputtering. Wuhan: South-central University for Nationalities, 2012
[12]	李波, 李博婷, 黄斌, 等. 高可靠性脉冲氙灯电源设计[J]. 强激光与粒子束, 2017, 29(6): 065004. doi: 10.11884/HPLPB201729.160468 Li Bo, Li Boting, Huang Bin, et al. Design of high reliability pulse xenon lamp power supply. High Power Laser and Particle Beams, 2017, 29(6): 065004 doi: 10.11884/HPLPB201729.160468
[13]	赵娟, 曹科峰, 曹宁翔, 等. 脉冲氙灯放电闪光仪[J]. 仪器仪表学报, 2009, 28(6): 52-53, 58. https://cpfd.cnki.com.cn/Article/CPFDTOTAL-YQYB200808003199.htm Zhao Juan, Cao Kefeng, Cao Ningxiang, et al. A strobo of pulse xenon lamp discharge. Chinese Journal of Scientific Instrument, 2009, 28(6): 52-53, 58 https://cpfd.cnki.com.cn/Article/CPFDTOTAL-YQYB200808003199.htm
[14]	李波, 李博婷, 叶超, 等. 双极性脉冲磁控溅射电源设计[J]. 强激光与粒子束, 2018, 30: 045004. doi: 10.11884/HPLPB201830.170393 Li Bo, Li Boting, Ye Chao, et al. Design of bipolar pulsed magnetron sputtering power supply. High Power Laser and Particle Beams, 2018, 30: 045004 doi: 10.11884/HPLPB201830.170393