基于智能算法的CR39径迹刻蚀过程模拟

齐伟; 贺书凯; 谷渝秋

doi:10.11884/HPLPB201931.190088

基于智能算法的CR39径迹刻蚀过程模拟

doi: 10.11884/HPLPB201931.190088

中国工程物理研究院激光聚变研究中心, 四川绵阳 621900

基金项目:

科学挑战计划项目 TZ2018005

国家重点研发项目 2016YFA0401100

详细信息

作者简介:
齐伟(1986—), 男，博士研究生，从事激光核物理及激光加速中的带电粒子诊断; bosqw7@163.com

通讯作者:
谷渝秋(1968—), 男，博士，研究员，从事强场等离子体物理、激光等离子体诊断技术等研究; yqgu@caep.cn

中图分类号: O571.1
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- 被引次数: 0
出版历程
- 收稿日期: 2019-04-02
- 修回日期: 2019-04-16
- 刊出日期: 2019-05-15

Intelligent algorithm based simulation of track etching process on CR39 detector

Research Center of Laser Fusion, CAEP, P.O.Box 919-988, Mianyang 621900, China

摘要

摘要: CR39可以用于激光等离子物理实验中的离子探测，并给出离子数目、种类和能量信息。通过采用唯象模型，利用离子在CR39中径迹形成的阻止本领动力学方程以及粒子群智能算法对径迹形成的过程进行了数值化模拟，研究了CR39中离子径迹在刻蚀过程中的演化过程，获得了入射离子能量和径迹直径、深度的对应关系，并且发现当离子射程与刻蚀深度相等时，径迹深度最大，给出了利用总刻蚀时间计算最大径迹深度对应的临界能量的公式。
- CR39 /
- 激光离子加速 /
- 离子阻止本领 /
- 径迹刻蚀 /
- 粒子群智能算法
Abstract: CR39 detector can be used to detect the ions in laser-plasma physics experiments and to obtain information about the number, kind and energy of incident ions. Using phenomenological model, we numerically simulated the formation process of ion track in CR39 using energy loss dynamics equation and particle swarm optimization (PSO) algorithm thus studied the revolution of the ion track in CR39 during the etching process. The corresponding relationship between ion energy and track diameter and depth was obtained. It is found that when the ion range was equal to the etching depth in CR39, the track depth was the largest. The equation of the critical energy with which the track is the deepest and determined by the etching time was given.
- CR39 /
- laser ion acceleration /
- ion energy loss /
- track etching /
- particle swarm optimization (PSO)

HTML全文

图 1 径迹刻蚀唯像模型图

Figure 1. Phenomenological model of track etching

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图 2 径迹刻蚀示意图

Figure 2. Picture of track etching process

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图 3 能量为20 MeV的质子入射到CR39中，能量和阻止本领随入射深度的变化曲线

Figure 3. Depth dependence of energy and energy loss in CR39 for proton with incident energy of 20 MeV

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图 4 不同离子径迹直径与能量的关系曲线，刻蚀时间为6 h

Figure 4. Relationship of track diameter and ion energy for different kind of particles, the etching time is 6 h

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图 5 刻蚀时间6 h时不同入射能量E_n的P和T离子径迹的剖面图

Figure 5. Projection plot of tracks for P and T ions with different incident energy E_n, the etching time is 6 h

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图 6 P和T在CR39中的射程(虚线)，以及刻蚀6 h后径迹顶端相对CR原始表面的深度(实线)随能量的变化

Figure 6. Energy dependence of range (dashed line) and track depth relative to the primary surface of CR39 (solid line) for P (blue line) and T (red line) ions

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