MHz 高压脉冲电源设计

姜松; 吴彤; 李孜; 饶俊峰

doi:10.11884/HPLPB201931.190152

MHz 高压脉冲电源设计

doi: 10.11884/HPLPB201931.190152

上海理工大学机械工程学院, 上海 200093

基金项目:

上海市扬帆项目 19YF1435000

国家自然科学基金青年项目 51707122

详细信息

作者简介:
姜松(1989—), 男，博士，从事脉冲功率及低温等离子体应用技术; jecifer@163.com

通讯作者:
吴彤(1993—)，女，硕士研究生，研究方向为脉冲功率技术; 946460986@qq.com

中图分类号: TM832
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出版历程
- 收稿日期: 2019-03-25
- 修回日期: 2019-07-03
- 刊出日期: 2019-09-15

Design of MHz high voltage pulse power supply

School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China

摘要

摘要: 设计了一款基于金属氧化物半导体场效应晶体管(MOSFET)开关的高压高频脉冲发生器，采用多个以光纤信号隔离触发的串联MOSFET作为高压开关，并由FPGA提供控制信号。该发生器由相同的MOSFET管部分组成，并联并按顺序触发，与参考信号同步。所述电路和工作模式克服了MOSFET管发生器的功耗限制，使脉冲重复率显著提高。详细介绍了该MHz高压脉冲发生器的工作原理和制作过程，然后进行了初步试验，验证了该发生器的性能。该电路在1 MHz的高重复率下，输出上升时间为十几ns、脉宽为百ns、电压幅值大于1 kV的平顶脉冲。
- 脉冲电源 /
- 功率MOSFET /
- ns脉冲 /
- 1 MHz重频 /
- 脉冲合成
Abstract: In this paper, a high voltage and high frequency pulse generator based on metal oxide semiconductor field effect transistor (MOSFET) switch is designed. Several series MOSFETs triggered by optical fiber signal isolation are used as high voltage switches, and the control signal is provided by the FPGA. The generator is composed of the same MOSFET tube, triggered in parallel and in sequence, synchronized with the reference signal. The circuit and working mode overcome the power consumption limitation of the MOSFET tube generator and significantly improve the pulse repetition rate. This paper introduces the working principle and fabrication process of the MHz high voltage pulse generator in detail. The preliminary test was carried out to verify the performance of the generator. Under the high repetition rate of 1 MHz, the output flat-top pulse had the rise time more than 10 ns, the pulse width 100 ns, and the voltage amplitude greater than 1 kV.
- pulse power supply /
- power MOSFET /
- nanosecond pulse /
- 1 MHz repetition frequency /
- pulse synthesis

HTML全文

图 1 系统结构原理图

Figure 1. Schematic diagram of system structure

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图 2 频率叠加原理图

Figure 2. Schematic diagram of frequency superposition

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图 3 MOSFET开关电路

Figure 3. MOSFET switching circuit

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图 4 带截尾的MOSFET开关电路

Figure 4. MOSFET switching circuit with truncation

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图 5 MOSFET的驱动电路

Figure 5. Driver circuit of the MOSFET

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图 6 MOSFET控制时序图

Figure 6. MOSFET control sequence diagram

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图 7 不同R_g值时的驱动电压波形和漏源极输出电压波形

Figure 7. Driving voltage waveform and drain source output voltage waveform at different R_g values

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图 8 两路脉冲叠加波形(1 MHz)

Figure 8. Two pulse superposition waveforms (1 MHz)

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图 9 加截尾管前后输出波形

Figure 9. Output waveform before and after adding truncated switch

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图 10 加截尾管后两路脉冲叠加波形(1 MHz)

Figure 10. Superimposed waveforms of two pulses after adding truncated switch (1 MHz)

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参考文献(12)

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