留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

一种基于磁饱和变压器的DSRD脉冲电源设计

史晓蕾 陈锦晖 王冠文 王磊 曾涛 杨威 王旭 苏文同 吴官健

史晓蕾, 陈锦晖, 王冠文, 等. 一种基于磁饱和变压器的DSRD脉冲电源设计[J]. 强激光与粒子束, 2020, 32: 025020. doi: 10.11884/HPLPB202032.190387
引用本文: 史晓蕾, 陈锦晖, 王冠文, 等. 一种基于磁饱和变压器的DSRD脉冲电源设计[J]. 强激光与粒子束, 2020, 32: 025020. doi: 10.11884/HPLPB202032.190387
Shi Xiaolei, Chen Jinhui, Wang Guanwen, et al. Design of drift step recovery diode pulse power generator based on magnetic saturation transformer[J]. High Power Laser and Particle Beams, 2020, 32: 025020. doi: 10.11884/HPLPB202032.190387
Citation: Shi Xiaolei, Chen Jinhui, Wang Guanwen, et al. Design of drift step recovery diode pulse power generator based on magnetic saturation transformer[J]. High Power Laser and Particle Beams, 2020, 32: 025020. doi: 10.11884/HPLPB202032.190387

一种基于磁饱和变压器的DSRD脉冲电源设计

doi: 10.11884/HPLPB202032.190387
基金项目: 国家自然科学基金项目(11675194,11475200)
详细信息
    作者简介:

    史晓蕾(1993—),男,博士研究生,研究方向为加速器注入系统脉冲电源;shixl@ihep.ac.cn

  • 中图分类号: TL501

Design of drift step recovery diode pulse power generator based on magnetic saturation transformer

  • 摘要: 漂移阶跃恢复二极管(DSRD)具有开关速度快、重频高、工作电流大等优点,在脉冲功率技术中很有应用前景。研究了一种基于磁饱和变压器的DSRD泵浦电路拓扑结构,具有体积小、重量轻、可靠性高等特点。根据DSRD的工作要求,采用功率MOSFET作为初级开关,结合磁饱和变压器的升压和磁开关特性,设计了DSRD的泵浦电路。利用Pspice软件对电路进行了仿真分析,验证了电路原理的正确性。在仿真分析的基础上,完成了一台原理样机的设计和电路实验。实验结果表明,该电源样机在前级充电电压800 V条件下,50 Ω负载上产生的脉冲幅值大于7 kV,前沿小于4.2 ns(10%~90%),半高宽约10 ns。
  • 图  1  脉冲电源电路原理图

    Figure  1.  Simplified scheme of the pulse generator

    图  2  DSRD脉冲电源电路仿真模型及仿真结果

    Figure  2.  Simulation model and result of the DSRD pulse generator

    图  3  脉冲电源实验电路

    Figure  3.  Prototype of the DSRD pulse generator

    图  4  输出脉冲波形

    Figure  4.  Test waveform of pulse

    图  5  电流互感器测得的DSRD泵浦电流

    Figure  5.  Test waveform of pumping current by current transformer

    表  1  DSRD主要特征参数

    Table  1.   The main parameters of DSRD

    no.paramaterssymboltest conditionsbridge limitunit
    minimummaximum
    1positive voltageVFIF=10 mA8V
    2reverse currentIRVR=500 V1mA
    3breakdown voltageV(BR)IR=5 mA1 000V
    4pulse voltageVpi≥300 A10kV
    5pulse currentiVp≥10 kV300A
    6rise timetrVp=10 kV3ns
    7repetitive frequencyfRVp=10 kV,tr≤3 ns10kHz
    下载: 导出CSV
  • [1] 陈锦晖, 王磊, 施华, 等. HEPS在轴注入冲击器系统及快脉冲电源样机研制[J]. 强激光与粒子束, 2019, 31:040017. (Chen Jinhui, Wang Lei, Shi Hua, et al. Application of fast pulsed power supply to high energy photon source[J]. High Power Laser and Particle Beams, 2019, 31: 040017 doi: 10.11884/HPLPB201931.190007
    [2] 刘锡三. 高功率脉冲技术[M]. 北京: 国防工业出版社, 2005.

    Liu Xisan. High pulsed power technology[M]. Beijing: National Defense Industry Press, 2005
    [3] Cook E G. Review of solid-state modulators[C]//Proc of XX International Linac Conference. 2000
    [4] 吴佳霖, 刘英坤. 高功率半导体开关器件DSRD的研究进展[J]. 微纳电子技术, 2015, 52(4):311-215, 250. (Wu Jialin, Liu Yingkun. Research development of the high power semiconductor switching device DSRD[J]. Micronanoelectronic Technology, 2015, 52(4): 311-215, 250
    [5] 梁勤金, 邓晓磊, 石小燕, 等. 新型半导体开关高压电磁脉冲产生技术[J]. 强激光与粒子束, 2012, 24(2):497-500. (Liang Qinjin, Deng Xiaolei, Shi Xiaoyan, et al. High voltage electromagnetic pulse generation using semiconductor switches[J]. High Power Laser and Particle Beams, 2012, 24(2): 497-500 doi: 10.3788/HPLPB20122402.0497
    [6] Krasnykh A. Overview of driver technologies for nanosecond TEM kickers[C]//Proceedings of the 7th International Particle Accelerator Conference. 2016, 3645-3647.
    [7] Benwell A, Burkhart C, Krasnykh A, et al. A 5kV, 3MHz solid-state modulator based on the DSRD switch for an ultra-fast beam kicker[C]//IEEE Power Modulator and High Voltage Conference. 2013: 328-331.
    [8] Lyublinsky A G, Korotkov S V, Aristov Y V, et al. Pulse power nanosecond-range DSRD-based generators for electric discharge technologies[J]. IEEE Trans Plasma Science, 2013, 41(10): 2625-2629. doi: 10.1109/TPS.2013.2264328
    [9] Grekhov I V, Mesyats G A. Physical basis for high-power semiconductor nanosecond opening switches[J]. IEEE Trans Plasma Science, 2000, 28(5): 1540-1544. doi: 10.1109/27.901229
    [10] Brylevsky V I, Efanov V M, Kardo-Sysyev A F, et al. Power nanosecond semiconductor opening plasma switches[J]//Proceedings of IEEE International Power Modulator Symposium. 1996: 51-54.
    [11] 张玲, 周斌, 谢义方, 等. 基于漂移阶跃恢复二极管的超宽带探地雷达发射技术[J]. 强激光与粒子束, 2009, 21(12):1854-1858. (Zhang Ling, Zhou Bin, Xie Yifang, et al. Transmitter techniques for ultra-wideband ground penetrating radar based on drift step recovery diodes[J]. High Power Laser and Particle Beams, 2009, 21(12): 1854-1858
    [12] Min B D, Kim J H, Pavlov E, et al. A compact inductive type pulse generator using diodes as opening switch[C]//IEEE Pulsed Power Conference. 2005: 1364-1367.
    [13] Korotkov S V, Aristov Y V, Voronkov V B, et al. A small dynistor generator of high-power nanosecond pulses[J]. Instruments and Experimental Techniques, 2018, 61(1): 44-46. doi: 10.1134/S0020441217060057
    [14] Korotkov S V, Aristov Y V, Voronkov V B, et al. Semiconductor switches of laser pumping pulses of nanosecond duration[J]. Instruments & Experimental Techniques, 2009, 52(5): 699.
  • 加载中
图(5) / 表(1)
计量
  • 文章访问数:  2563
  • HTML全文浏览量:  746
  • PDF下载量:  242
  • 被引次数: 0
出版历程
  • 收稿日期:  2019-09-28
  • 修回日期:  2019-12-26
  • 刊出日期:  2019-12-26

目录

    /

    返回文章
    返回