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不同实验条件对激光诱导等离子体的影响机理研究

王莉 周彧 傅院霞 徐丽

王莉, 周彧, 傅院霞, 等. 不同实验条件对激光诱导等离子体的影响机理研究[J]. 强激光与粒子束, 2020, 32: 061003. doi: 10.11884/HPLPB202032.190455
引用本文: 王莉, 周彧, 傅院霞, 等. 不同实验条件对激光诱导等离子体的影响机理研究[J]. 强激光与粒子束, 2020, 32: 061003. doi: 10.11884/HPLPB202032.190455
Wang Li, Zhou Yu, Fu Yuanxia, et al. Study on mechanism of effect of different experimental conditions on laser-induced plasma[J]. High Power Laser and Particle Beams, 2020, 32: 061003. doi: 10.11884/HPLPB202032.190455
Citation: Wang Li, Zhou Yu, Fu Yuanxia, et al. Study on mechanism of effect of different experimental conditions on laser-induced plasma[J]. High Power Laser and Particle Beams, 2020, 32: 061003. doi: 10.11884/HPLPB202032.190455

不同实验条件对激光诱导等离子体的影响机理研究

doi: 10.11884/HPLPB202032.190455
基金项目: 国家自然科学基金项目(11604003);光电材料科学与技术安徽省重点实验室项目(OMST201703);安徽省高校自然科学重点研究项目(KJ2019A0857)
详细信息
    作者简介:

    王 莉(1987—),女,硕士研究生,讲师,主要从事激光光谱分析及其应用;wangli8710@163.com

  • 中图分类号: O433;O562

Study on mechanism of effect of different experimental conditions on laser-induced plasma

  • 摘要: 常温常压下,采用波长532 nm的Nd:YAG纳秒激光器激发诱导空气中的铝合金,由高分辨率的光谱仪和ICCD对等离子体发射光谱采集和实现光电转换。研究激光能量、ICCD门延迟和聚焦透镜到样品表面的距离(lens-to-sample distance,LTSD)对谱线信号强度和等离子体电子温度的影响,并分析了产生影响的物理机制。结果表明,固定ICCD门延迟和LTSD,随着激光能量的增大,谱线强度和电子温度均增大;计算结果表明,当激光能量从20 mJ增加到160 mJ时,原子谱线Al I 396.15 nm,Mg I 518.36 nm,离子谱线Mg II 279.54 nm谱线强度相较于20 mJ分别提高了12.83,6.45,10.56倍。固定激光能量和LTSD,ICCD门延迟在100~4 000 ns范围内变化时,随着延迟的增加,谱线强度和等离子体电子温度均呈指数形式衰减。固定ICCD门延迟和激光能量,采用焦距为75 mm的聚焦透镜,研究了LTSD对等离子体参数的影响机理。结果表明,聚焦透镜到样品的距离对等离子体的谱线强度和电子温度有较大的影响。等离子体的特征谱线强度和等离子体的电子温度的变化规律基本一致,分别在聚焦透镜到样品表面的距离为73 mm和79 mm处取得峰值,并在73 mm处对应最大值。
  • 图  1  LIBS实验装置示意图

    Figure  1.  LIBS experimental setup

    图  2  激光诱导铝合金等离子体光谱

    Figure  2.  Laser induced aluminum alloy plasma

    图  3  谱线相对强度随激光能量的变化

    Figure  3.  The relative intensity of the spectral line varies with the laser energy

    图  4  等离子体的电子温度随激光能量的变化

    Figure  4.  The electron temperature of plasma varies with the laser energy

    图  5  谱线相对强度随ICCD门延迟的变化

    Figure  5.  The relative intensity of the spectral line varies with ICCD gate delay

    图  6  等离子体的电子温度随ICCD门延迟的变化

    Figure  6.  The electron temperature of plasma varies with ICCD gate delay

    图  7  谱线相对强度随LTSD的变化

    Figure  7.  The relative intensity of the spectral line varies with LTSD

    图  8  等离子体的电子温度随LTSD的变化

    Figure  8.  The electron temperature of plasma varies with LTSD

    表  1  用来计算等离子体电子温度的Al原子谱线参数

    Table  1.   Spectroscopic parameters of Al I atomic lines used for calculating the plasma electron temperature

    wavelength/nmupper level energy/cm−1gA/(108 s−1
    308.2232 43540.622
    309.2732 43660.783
    394.4025 34720.498
    396.1525 34720.982
    下载: 导出CSV
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出版历程
  • 收稿日期:  2019-12-06
  • 修回日期:  2020-03-24
  • 刊出日期:  2020-05-12

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