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真空断路器弧后残余等离子体的探针诊断方法

马廷彪 陈里昂 徐铭铭 陈辉 葛国伟 程显

马廷彪, 陈里昂, 徐铭铭, 等. 真空断路器弧后残余等离子体的探针诊断方法[J]. 强激光与粒子束, 2021, 33: 065013. doi: 10.11884/HPLPB202133.210071
引用本文: 马廷彪, 陈里昂, 徐铭铭, 等. 真空断路器弧后残余等离子体的探针诊断方法[J]. 强激光与粒子束, 2021, 33: 065013. doi: 10.11884/HPLPB202133.210071
Ma Tingbiao, Chen Li’ang, Xu Mingming, et al. Probe diagnostics of post-arc residual plasma of vacuum circuit breakers[J]. High Power Laser and Particle Beams, 2021, 33: 065013. doi: 10.11884/HPLPB202133.210071
Citation: Ma Tingbiao, Chen Li’ang, Xu Mingming, et al. Probe diagnostics of post-arc residual plasma of vacuum circuit breakers[J]. High Power Laser and Particle Beams, 2021, 33: 065013. doi: 10.11884/HPLPB202133.210071

真空断路器弧后残余等离子体的探针诊断方法

doi: 10.11884/HPLPB202133.210071
基金项目: 河南省科技攻关计划项目(192102210142)
详细信息
    作者简介:

    马廷彪(1962—),男,主要从事配电网设备故障诊断技术研究

  • 中图分类号: TM561

Probe diagnostics of post-arc residual plasma of vacuum circuit breakers

  • 摘要: 真空断路器开断过程中弧后残余等离子体是表征其开断性能的重要参量。基于探针电子饱和区域工作原理,提出了一种真空电弧弧后残余等离子体电子密度测量方法,分析了其结构和工作原理。设计了探针诊断系统的探针结构和控制系统,基于可拆卸真空腔体进行了残余等离子体电子密度的单探针测量实验,采用高速相机观测电弧发展演变过程,研究了电流大小、触头结构等参数对残余等离子体衰减过程的影响。通过前人其他诊断方法对比验证了该测量方法的有效性,为后续真空断路器弧后微观特性研究提供了一种低成本、有效的诊断方法。
  • 图  1  探针工作的伏安特性曲线[20]

    Figure  1.  Volt-ampere characteristic curve of the probe operation

    图  2  探针诊断电路和探针结构

    Figure  2.  Probe diagnostic circuit and structure

    图  3  探针布置方式

    1—Mo wire;2—Al2O3 ceramic pipe;3—epoxy resin pipe;4—ϕ8 nylon screw rod;5—ϕ8 nylon nut;6—nylon adaptor;7—ϕ10 nylon screw rod;8—counterweight base。

    Figure  3.  Configuration of the probe diagnostics

    图  4  探针控制电路原理图

    Figure  4.  Probe control loop

    图  5  实验主控制器

    Figure  5.  Test main controller

    图  6  探针诊断试验平台

    Figure  6.  Test platform

    图  7  探针试验整体波形图

    Figure  7.  Probe test overall waveform

    图  8  探针电流局部放大图

    Figure  8.  Local magnification of probe current

    图  9  电弧过零前0~0.9 ms的电弧图像

    Figure  9.  Arc images at 0~0.9 ms before current crosses zero

    图  10  不同开断电流下的电子密度曲线

    Figure  10.  Electron density curves at different switching current

    图  11  不同类型触头下的电子密度曲线

    Figure  11.  Electron density curves under different types of contacts

    图  12  对比验证试验

    Figure  12.  Comparative verification test

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出版历程
  • 收稿日期:  2021-03-08
  • 修回日期:  2021-05-25
  • 网络出版日期:  2021-06-09
  • 刊出日期:  2021-06-15

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