等离子体表面梯度硅沉积对环氧树脂电气性能的影响

彭程凯; 闫纪源; 康玉婵; 宋岩泽; 张亚辉; 马国爽; 万子剑; 谢庆

doi:10.11884/HPLPB202133.210106

等离子体表面梯度硅沉积对环氧树脂电气性能的影响

doi: 10.11884/HPLPB202133.210106

彭程凯^1,,
闫纪源^{1, 2},
康玉婵¹,
宋岩泽¹,
张亚辉¹,
马国爽¹,
万子剑¹,
谢庆^{1, 2, ,}

1.
华北电力大学输变电设备安全防御重点实验室，河北保定 071000
2.
华北电力大学新能源电力系统国家重点实验室，北京 102206

基金项目: 国家自然科学基金项目（51777076）；中央高校基本科研业务费专项资金项目（2019MS083）；新能源电力系统国家重点实验室项目(LAPS2019-21)

详细信息

作者简介:
彭程凯（1996—），男，硕士研究生，从事高电压与绝缘技术相关研究；

通讯作者:
谢　庆（1979—），男，教授，博士，从事等离子体、高电压与绝缘技术相关研究；

中图分类号: O53
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出版历程
- 收稿日期: 2021-03-23
- 修回日期: 2021-05-01
- 网络出版日期: 2021-06-01
- 刊出日期: 2021-06-15

Effect of plasma surface gradient silicon deposition on the electrical properties of epoxy resin

1.
Hebei Provincial Key Laboratory of Power Transmission Equipment Security Defense, North China Electric Power University, Baoding 071000, China
2.
State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing 102206, China

摘要

摘要: 环氧树脂作为常见的绝缘材料，在高压直流电场作用下易在其表面积累电荷，发生电场畸变，导致材料绝缘性能下降，影响电力系统运行可靠性。为改善气固界面的电荷特性和绝缘性能，在大气压等离子体射流技术的基础上，对环氧树脂表面进行等离子体梯度硅沉积处理。对改性前后环氧树脂表面理化特性、表面电导率、表面电荷消散和沿面耐压特性进行了多参数测量。实验结果表明，梯度改性对材料表面的物理形貌和化学组分均有明显影响，不同区域的电导率实现了梯度分布，加快了表面电荷消散速度，表面陷阱能级变浅；梯度改性后的样品沿面闪络电压提升幅度可达30.16%。通过等离子体表面梯度硅沉积处理能够改善环氧树脂表面电气性能，在高压直流设备的绝缘设计方面具有广阔的应用前景。
- 等离子体 /
- 梯度改性 /
- 硅沉积 /
- 环氧树脂 /
- 表面电导率 /
- 沿面闪络
Abstract: As a common insulating material, epoxy resin under high-voltage direct current electric field is prone to accumulate charges on its surface, causing electric field distortion, resulting in a decrease in the insulation performance of the material and affecting the reliability of the power system. To improve the charge characteristics and insulation properties of the gas-solid interface, based on the atmospheric pressure plasma jet technology, plasma gradient silicon deposition were conducted on the epoxy resin surface. The surface physical and chemical properties, surface conductivity, surface charge dissipation and creeping pressure characteristics of epoxy resin before and after modification were measured by multiple parameters. The experimental results show that the gradient modification has a significant effect on the physical morphology and chemical composition of the material surface. The conductivity of different regions has achieved a gradient distribution, which speeds up the dissipation of surface charges and reduces the surface trap energy level; The flashover voltage of the subsequent samples can increase by 30.16% along the surface. In summary, the plasma surface gradient silicon deposition treatment can improve the electrical properties of the epoxy resin surface, and has broad application prospects in the insulation design of high-voltage DC equipment.
- plasma /
- gradient modification /
- silicon deposition /
- epoxy resin /
- surface conductivity /
- surface flashover

HTML全文

图 1 样品制备流程图

Figure 1. Flow chart of sample preparation

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图 2 APPJ表面梯度改性实验平台示意图

Figure 2. APPJ schematic diagram of surface gradient modification experimental platform

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图 3 样品表面梯度分区图

Figure 3. Surface gradient distribution along the sample

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图 4 梯度硅沉积改性环氧树脂样片实物图

Figure 4. Photoes of epoxy resin sample modified by gradient silicon deposition

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图 5 沿面闪络测试电极

Figure 5. Surface flashover test electrode

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图 6 表面电位测试平台

Figure 6. Surface potential test platform

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图 7 不同处理时长的样片表面形貌变化图

Figure 7. Surface morphologies of samples with different modification time

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图 8 不同改性区域环氧树脂表面SEM图

Figure 8. SEM images of epoxy resin surface of different modification areas

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图 9 不同改性时间环氧树脂表面XPS谱图

Figure 9. XPS full scan of epoxy resin surface of different modification areas

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图 10 环氧树脂表面不同区域电位归一化消散曲线

Figure 10. Charge decay curves of different regions on the surface of epoxy resin

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图 11 环氧树脂表面不同区域的陷阱能级分布

Figure 11. Energy level distribution of traps in different regions on the surface of epoxy resin

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图 12 样品沿面闪络电压的威布尔分布

Figure 12. Weibull distribution of sample surface flashover voltage

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表 1 不同处理时长样片表面的粗糙度

Table 1. Surface roughness of the sample with different processing time

processing time/min	surface roughness R_a/nm
0	1092.03
1	968.26
2	902.75
3	858.84
4	810.17

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表 2 不同处理区域Si，C，O，Al元素含量变化

Table 2. Contents of Si, C, O and Al in different treatment areas

element	content/%
element	0 min	1 min	2 min	3 min	4 min
Si	5.06	10.60	12.47	18.34	21.95
C	64.45	62.89	57.40	42.51	36.18
O	20.20	26.27	29.92	38.95	41.68
Al	0.29	0.24	0.21	0.20	0.19

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表 3 不同等离子体硅沉积处理时长EP表面电导率

Table 3. Surface conductivity of EP at different plasma silicon deposition time

modification time/min	surface conductivity/S
0	6.31E-17
1	5.59E-16
2	1.12E-16
3	7.83E-15
4	2.16E-15

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