Influence of mid-infrared laser pulse width on in-band damage threshold of HgCdTe
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摘要: 研究了脉宽对于中红外脉冲激光带内损伤碲镉汞（HgCdTe）材料阈值的影响，使用一维自洽模型对激光辐照HgCdTe材料程中的载流子数密度，载流子对数目流，载流子对能流，载流子温度和材料晶格温度等相关参数进行仿真计算。仿真结果表明，波长2.85 μm，脉宽30 ps～10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值为200～500 mJ/cm2。其中，300 ps～3 ns脉冲激光的损伤阈值相近，均为200 mJ/cm2且低于其他脉宽激光的损伤阈值。搭建实验光路并进行相关实验验证仿真模型的正确性。实验发现，波长2.85 μm、脉宽300 ps的单脉冲激光带内辐照HgCdTe材料的损伤阈值在200 mJ/cm2左右。相同条件下，10 ns单脉冲激光带内辐照HgCdTe材料的损伤阈值约474 mJ/cm2。百皮秒脉冲激光对HgCdTe材料的损伤过程结合了热击穿和光学击穿效应，其独特的毁伤机理加剧了材料的损伤。Abstract: To study the influence of pulse width on the damage threshold of HgCdTe material irradiated by mid-infrared in-band laser pulse, a one-dimensional model named self-consistent model is established. Some parameters including number density of carrier, carrier and energy current, temperature of carrier and lattice are calculated in the whole process. Damage thresholds of in-band single pulsed laser, whose wavelength is 2.85 μm and pulse width ranges from 30 ps to 10 ns, are obtained. The results show that, damage threshold rauge of in-band laser is 200−500 mJ/cm2. Among them, the damage threshold of 300 ps to 3 ns laser pulses is about 200 mJ/cm2, which is lower than that of other pulsed lasers. The validity of simulation model is verified by setting up the experimental devices and carrying out relevant experiments. Using a single pulsed laser with wavelength of 2.85 μm and pulse width of 300 ps as the light source, the damage threshold is about 200 mJ/cm2. Under the same conditions, when 10 ns single laser pulse is used, the damage threshold is greater than 474 mJ/cm2. The damage process of the HgCdTe material destroyed by hundred-picosecond pulsed laser combines thermal and optical breakdown effects, and its unique mechanism aggravates the destruction of material.
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图 1 Hg1-xCdxTe材料的能带结构随组分的变化关系和HgCdTe材料的响应曲线图（红色曲线）
Figure 1. Band structure of Hg1-xCdxTe changes with composition and image of response curve of HgCdTe material (red curve)
图 2 入射面处载流子温度、晶格温度与载流子数密度随时间的变化（100 ps，200 mJ/cm2的激光脉冲）
Figure 2. Variation of carrier temperature, lattice temperature and number density of carrier with time at the incident plane (100 ps, 200 mJ/cm2 incident pulse)
图 3 HgCdTe材料的温度和载流子数目随激光脉冲宽度的变化（能量密度200 mJ/cm2）
Figure 3. Material’s temperature and carrier density in the HgCdTe material change with pulse width (energy density is 200 mJ/cm2)
图 4 不同脉宽（30 ps～10 ns）激光作用下HgCdTe材料温度和载流子数密度随入射能量密度的变化（能量密度100～500 mJ/cm2）
Figure 4. Material’s temperature and carrier density in HgCdTe material irradiated by different kinds of laser pulses change with energy density (pulse width is 30 ps ～ 10 ns. Energy density is 100～500 mJ/cm2)
图 5 HgCdTe探测器装置的分层结构示意图和探测器滤光片的透过率曲线
Figure 5. Hierarchical structure diagram of HgCdTe detector and transmittance curve of optical filter
图 7 探测器像元在衰减法下的响应轮廓图和光强度衰减为原强度的2.85×10-7时探测器显示的光斑图
Figure 7. Contour plot of detector pixels’ response measured by attenuation method and image of light spot displayed by the detector (The light intensity attenuates to 2.85×10-7 of the original intensity)
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