砷化镓光导开关的损伤形貌研究

沙慧茹; 肖龙飞; 栾崇彪; 冯琢云; 李阳凡; 孙逊; 胡小波; 徐现刚

doi:10.11884/HPLPB202234.210579

砷化镓光导开关的损伤形貌研究

doi: 10.11884/HPLPB202234.210579

沙慧茹^{1, 2,},
肖龙飞^{1, 2, ,},
栾崇彪³,
冯琢云^{1, 2, 3},
李阳凡^{1, 2},
孙逊^{1, 2},
胡小波^{1, 2},
徐现刚^{1, 2}

1.
山东大学新一代半导体材料研究院，济南 250100
2.
山东大学晶体材料国家重点实验室，济南 250100
3.
中国工程物理研究院流体物理研究所，四川绵阳 621900

基金项目: 山东省重点研发计划项目(2019JMRH0901)；山东省重点研发计划项目(2019JMRH0201)

详细信息

作者简介:
沙慧茹，202034074@mail.sdu.edu.cn

通讯作者:
肖龙飞，xiaolongfei@sdu.edu.cn

中图分类号: TN36
计量
- 文章访问数: 825
- HTML全文浏览量: 218
- PDF下载量: 80
- 被引次数: 0
出版历程
- 收稿日期: 2021-12-30
- 修回日期: 2022-04-12
- 网络出版日期: 2022-04-18
- 刊出日期: 2022-06-17

Damage morphology of GaAs photoconductive switch

Sha Huiru^{1, 2
,},
Xiao Longfei^{1, 2
, ,},
Luan Chongbiao³,
Feng Zhuoyun^{1, 2, 3},
Li Yangfan^{1, 2},
Sun Xun^{1, 2},
Hu Xiaobo^{1, 2},
Xu Xiangang^{1, 2}

1.
Institute of Noval Semiconduction, Shandong University, Jinan 250100, China
2.
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
3.
Institute of Fluid Physics, CAEP, Mianyang 621900, China

摘要

摘要: 制作了同面型砷化镓光导开关，并测试了其导通性能。在偏置电压8 kV、激光能量10 mJ、重复频率10 Hz的条件下，研究了光导开关触发10⁴次后器件表面的损伤形貌。利用激光扫描共聚焦显微镜，对电极边缘及电极间的损伤形貌进行分析，研究发现阳极边缘由于热积累形成热损伤，而阴极边缘的热损伤来源于热应力，并对电极间损伤形貌进行细致表征及分类。
- 光导开关 /
- 砷化镓 /
- 损伤 /
- 形貌 /
- 热效应
Abstract: A lateral GaAs photoconductive switch was fabricated and its conduction performance was tested. To study device damage in long-term working environment, the switch is studied operating at 8 kV, 10 Hz triggering frequency and 10 mJ triggering energy for 10⁴ times. By means of confocal laser scanning microscopy, the damage morphology of the electrode edge and between the electrodes are analyzed. It is found that the thermal damage of the anode edge was caused by thermal accumulation, and the damage of the cathode edge was caused by thermal stress. The damage morphology between electrodes is characterized and classified in detail.
- photoconductive semiconductor switch /
- gallium arsenide /
- damage /
- morphology /
- heat effect

HTML全文

图 1 砷化镓光导开关结构示意图

Figure 1. Structural schematic diagram of GaAs photoconductive switch

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图 2 砷化镓光导开关测试电路图和光路图

Figure 2. Confocal response curves with different annular pupils

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图 3 光导开关在不同偏置电压下的电流值及光导开关的最小导通电阻值

Figure 3. Current value of photoconductive switch under different bias voltage and minimum on-resistance value of photoconductive switch

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图 4 光导开关在不同触发能量下的电流值及光导开关的最小导通电阻值

Figure 4. Current value of photoconductive switch at different triggering energies and minimum on-resistance value of photoconductive switch

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图 5 光导开关电流值与触发次数的关系图

Figure 5. Current value of photoconductive at different triggering number

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图 6 开关损伤表面形貌图

Figure 6. Analysis of damaged surface morphology of switches

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图 7 热应力所引起的破坏

Figure 7. Diagram of damage between two electrodes of switch

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图 8 两个电极之间不同形式的损伤

Figure 8. Damage caused by thermal stress

(a), (b) single point injury; (c) diffuse point injury; (d) twin point injury; (e), (f) strip damage

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图 9 损伤层面三维效果图

Figure 9. 3-D effect map of damage layer

(a), (b) single point injury; (c) flake point injury; (d) twin point injury; (e), (f) strip damage

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