A driver circuit to adjust the pulse edges of Marx generators
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摘要: 为了调节固态Marx发生器输出脉冲的边沿，提出了一种新型的的驱动电路，该方案通过调整充放电管的驱动电压，结合驱动电路的硬件结构，调节米勒平台时间，进而调整充放电管开通速度，实现了对于高压输出脉冲的边沿调节，其结构简单，不需要每级独立的控制信号。对于该电路中驱动电压和开关管开通速度的关系建立了模型进行了推导。结合理论分析结果设计了驱动电路的参数，仿真结果表明该驱动电路能够调节输出脉冲边沿。搭建带有设计参数下驱动电路的固态Marx发生器在容性负载下和阻性负载下进行了实验验证。利用该方案实现了对于6级Marx电路的3.6 kV输出脉冲在55～7.7 µs的边沿调节，验证了该方案的可行性，并对比分析了不同阻性负载对于脉冲边沿造成的影响。实验结果表明：该电路在提高固态脉冲电源的边沿调节性能方面有独特的优势。Abstract: A novel driving circuit for the adjustment of pulse edges in Marx generators is proposed. By adjusting the driving voltage amplitudes of the charge and discharge switches, the Miller plateau time is controlled in the driving circuit. Then the turn-on speed of the switches and the pulse edges of high-voltage pulses are adjusted. This drive circuit is simple in structure and does not require additional independent signals. A model is established to study the relationship between the driving voltage amplitudes and the turn-on speed of switches. Combined with the theoretical analysis results, the parameters of the driving circuit are designed, and the simulation results show that the driving circuit can adjust the pulse edge. A solid-state Marx generator with the proposed driving circuit was built to experiment under capacitive load and resistive load. Using this method, the edge adjustment of 3.6 kV output pulse from 55 ns to 7.7 μs for 6-stage Marx circuit was achieved, and the influence of different resistive loads on the pulse edge is compared and analyzed. The experiment results show that the driving circuit has unique advantages in improving the edge adjustment performance of pulsed generators.
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Key words:
- solid-state Marx generators /
- pulse edge adjustment /
- Miller plateau /
- driving circuit
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图 1 Marx 发生器的边沿形成过程
Figure 1. Formation of rise-fall edges in solid-state Marx generator
图 3 驱动电路不同工作模式与相应电压波形图
Figure 3. Working modes of driving circuit and corresponding voltage waveforms
图 4 驱动电路中只有(a)一个MOSFET 和(b)两个MOSFET时，不同驱动电压下门级MOSFET的工作状态图。
Figure 4. Working states of gate MOSFETs at different driver voltage with (a) only one MOSFET and (b) two MOSFETs in the driver circuit
图 5 米勒平台期间功率MOSFET的等效电路
Figure 5. Equivalent circuit of the power MOSFET during the Miller plateau time
图 6 采用单个MOSFET的驱动电路调节上升沿仿真结果
Figure 6. Rising edge adjustment simulation result using single MOSFET driver circuit
图 7 只增加Cgd和采用两个MOSFET的驱动电路调节上升沿仿真结果
Figure 7. Rising edge adjustment simulation result only adding Cgd and using double MOSFET driver circuit
图 8 使用边沿调节驱动电路的 Marx 发生器实物图
Figure 8. Photo of a Marx generator with the proposed driver circuit
图 9 单个MOSFET驱动电路第一级放电管Ugs，Uds波形
Figure 9. Ugs, Uds waveform of first discharge switch using single MOSFET driver circuit
图 10 单个MOSFET驱动电路调节边沿波形
Figure 10. Rise-fall time adjustment waveform using single MOSFET driver circuit
图 11 两个MOSFET的驱动电路调节上升沿波形
Figure 11. Rise time adjustment waveform using double MOSFET driver circuit
图 12 阻性负载下脉冲边沿调节结果
Figure 12. Pulse edge adjustment experimental results under resistive load
表 1 单个MOSFET驱动电路参数
Table 1. Experimental circuit parameters
gate MOSFET Uz1/V R1/Ω R2/Ω Cgd/pF Rc/Ω AO3407 13 56 10 150 10 
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