Influence of high-power microwave signal on temperature distribution of PIN limiter
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摘要: 针对高功率微波波形参数对限幅器温度分布特性的影响，基于双级PIN限幅器的场路协同仿真模型对微波脉冲幅值、频率对温度分布的影响展开了仿真研究。结果表明：微波脉冲幅值、频率的提升会使双级PIN限幅器中PIN二极管的高温区域分布向P区拓展、高温区域分布范围扩大；相对而言，微波脉冲幅值对温度分布的影响更为显著，频率对温度分布的影响相对较小。Abstract: A field-circuit co-simulation model of a two-stage PIN limiter was built to explore the influence of high-power microwave signal parameters on the temperature distribution of the limiter. The simulation results indicate that the increase in microwave pulse amplitude or frequency can expand the PIN diode's high-temperature region inside the two-stage PIN limiter towards the P-region. Compared with the frequency, the amplitude of the microwave pulse has a more significant impact on the temperature distribution of the PIN limiter.
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Key words:
- high power microwave /
- PIN limiter /
- microwave effect /
- thermal effect /
- temperature distribution
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图 1 双级PIN限幅器场路协同仿真模型
Figure 1. Field-circuit collaborative simulation model of two-stage PIN limiter
图 2 第一级PIN二极管结构及掺杂情况
Figure 2. Structure and doping concentration of the first stage PIN diode
图 3 第二级PIN二极管结构及掺杂情况
Figure 3. Structure and doping concentration of the second stage PIN diode
图 4 限幅器达到Si熔点时刻前后两级PIN二极管内部温度分布曲线
Figure 4. Curve of the two PIN diodes’ temperature distribution inside the limiter at the moment its maximum temperature reaches the melting point of silicon
图 5 不同电压幅值下温度分布情况(局部)
Figure 5. Temperature distribution under different amplitude (local)
图 6 不同频率下的温度分布情况（局部）
Figure 6. Temperature distribution under different frequency (local)
图 7 不同幅值信号作用下达到Si熔点时刻的归一化耗散功率分布(局部)
Figure 7. Normalized dissipation power distribution under the action of signals with different amplitude at the moment the limiter’s maximum temperature reaches the melting point of silicon (local)
图 8 一个信号周期中不同时刻的电子、空穴浓度分布
Figure 8. Electron and hole concentration distribution at different moments in a signal cycle
图 9 不同时刻的电场强度分布
Figure 9. Electric field distribution at different moment in the signal cycle
图 10 不同时刻的电流密度分布
Figure 10. Current density distribution at different moment in the signal cycle
图 11 不同幅值信号作用下达到Si熔点时刻的归一化电场强度分布(局部)
Figure 11. Normalized electric field distribution under the action of signals with different amplitude at the moment the limiter’s maximum temperature reaches the melting point of silicon (local)
表 1 不同电压幅值信号作用下的热区分布范围
Table 1. Width of high-temperature area under different amplitude
voltage/V width of high-temperature area/μm 400 6.6 500 6.9 600 7.3 700 7.6 800 7.9 900 8.1 1000 8.3 
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