Research on efficient fabrication of nanogratings by space shaping femtosecond laser
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摘要: 针对常规物镜聚焦飞秒激光光斑较小，难以单次直写加工成型大面积纳米光栅结构的问题，提出了利用空间狭缝整形的飞秒激光脉冲直写方法。通过开展单晶硅表面纳米光栅结构对加工系统的参数依赖关系研究，获得入射整形飞秒激光能量密度8.00 μJ/cm2、扫描速度9 mm/s、狭缝宽度0.40 mm的优化条件。采用SEM、AFM等手段对光栅进行微观表征，结果表明，单次扫描所制备的纳米光栅结构具有极高的宽度 （41.20 μm），说明提出的方法可以显著提升 一次成型大面积纳米光栅结构的制备效率。Abstract: Aiming at the difficulty of fabricating large-area nanograting structures with femtosecond laser in one step, the direct writing method of femtosecond laser pulse using slit-spatial shaping is proposed in this paper. By conducting a study on the parameter dependence of nanograting structures on the single-crystal silicon surface with the processing system, the optimized conditions of incident shaping femtosecond laser—energy density of 8.00 μJ/cm2, scanning speed of 9 mm/s, and slit width of 0.40 mm—are obtained. By using SEM, AFM and other microscopic characterization methods, it is indicated that the fabricated nanograting structure has an extremely high width (41.20 μm), greatly improving the fabrication efficiency of large-area nanograting structures in one step. This study provides a certain reference for the current research on efficiency optimizing and performance enhancing of femtosecond laser direct writing systems.
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图 1 空间狭缝整形飞秒激光直写系统实验流程图
Figure 1. Experimental flowchart of spatial-shaped femtosecond laser direct writing
图 2 空间狭缝整形飞秒激光光斑衍射的仿真与实际拍摄结果，比例尺为10 μm
Figure 2. Simulation and actual shooting results of femtosecond laser spot diffraction through slit spatial shaping.The scale bar is 10 μm
图 3 使用CCD拍摄的未整形fs脉冲光斑形貌和0.5 mm狭缝整形fs脉冲光斑形貌及其对应不同能量密度下加工结果。比例尺为5 μm
Figure 3. Unshaped fs pulse spot morphology and slit-shaped fs pulse spot morphology captured using CCD and their corresponding processing results at different energy densities. The scale bar is 5 μm
图 4 设置狭缝宽度为0.50 mm，扫描速度为9 mm/s，单晶硅表面纳米光栅在不同激光脉冲能量密度下的CCD图像。比例尺为10 μm
Figure 4. Setting the slit width at 0.50 mm and the scanning speed at 9 mm/s, CCD images of the nanograting structures on the surface of monocrystalline silicon at different laser pulse fluences are obtained. The scale bar is 10 μm
图 5 激光能量密度为8.50 μJ/cm2，狭缝宽度为0.50 mm，单晶硅表面纳米光栅在不同激光脉冲扫描速度下的CCD图像。比例尺为10 μm
Figure 5. Setting the laser energy density at 8.50 μJ/cm2 and the slit width at 0.50 mm, CCD images of the nanograting structures on the surface of monocrystalline silicon at different laser pulse scanning speeds are obtained. The scale bar is 10 μm
图 6 激光能量密度为8.50 μJ/cm2，扫描速度为9 mm/s，单晶硅表面纳米光栅在不同狭缝宽度下的CCD图像。比例尺为10 μm
Figure 6. Setting the laser energy density at 8.50 μJ/cm2 and the scanning speed at 9 mm/s, CCD images of the nanograting structures on the surface of monocrystalline silicon are captured at different slit widths. The scale is 10 μm
图 7 优化条件下制备的单晶硅表面纳米光栅结构
Figure 7. Nanograting structures on the surface of monocrystalline silicon fabricated under optimized conditions
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