Technology and application of the voltage-controlled pulse power semiconductor devices
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摘要: 近年来，采用新一代半导体开关替代传统气体或真空开关是脉冲功率系统的一种重要发展趋势。为了给脉冲功率半导体器件领域的技术发展提供参考，简要介绍了压控型脉冲功率半导体器件技术的发展历程，总结了MOS栅控晶闸管（MCT）在器件设计、工艺和可靠性等方面的研究进展，同时通过比较MCT与一般商业IGBT器件，阐述了MCT相比于其他功率脉冲半导体器件的优劣情况，并结合典型应用场景展示了MCT器件的优势，对压控型脉冲功率半导体器件的发展趋势进行了简要分析。Abstract: Pulse power technology compresses low-power energy in the time domain to achieve high-power output in extremely short durations. In recent years, the trend in pulse power technology has been replacing traditional gas or vacuum switches with a new generation of semiconductor switches. To promote the technical development in the field of pulse power semiconductor devices, this article briefly introduces the development history of voltage-controlled pulse power semiconductor devices and the structure of MOS-controlled thyristors (MCTs). By comparing the pulse performance of MCT with that of commercial IGBT, it illustrates the advantages of high pulse current peak and high di/dt pulse of MCT under the same conditions. However, the conventional MCT cannot be turned off at zero gate voltage, and the carrier injection efficiency and conduction speed need to be further improved. To solve the shortcomings of conventional MCT that can not be turned off under zero voltage, this article then summarizes the research progress in device design, technology, and reliability of MCT. It also demonstrates the advantages of MCT devices in typical application scenarios and provides a brief analysis of the development trends of voltage-controlled pulse power semiconductor devices.
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图 1 脉冲功率技术的能量压缩-存储-释放示意图
Figure 1. Schematic diagram of energy compression-storage-release in pulse power technology
图 2 电容储能型脉冲功率电路放电回路等效模型
Figure 2. Equivalent model of capacitor energy storage pulse power circuit
图 3 MCT器件结构示意图及其等效电路
Figure 3. Structure schematic and equivalent circuit of MCT device
图 5 CS-MCT与传统MCT元胞结构与等效电路
Figure 5. Cross-section schematic and equivalent circuit diagram of CS-MCT and equivalent circuit of conventional MCT
图 6 CS-MCT与传统MCT的仿真性能对比
Figure 6. Simulation comparison between CS-MCT and conventional MCT
图 7 高阳极注入效率的FS型MCT元胞结构与工作机理
Figure 7. Cross-section schematic of HiA-MCT and operation mechanism
图 8 HiA-MCT与传统MCT脉冲特性对比及载流子浓度分布对比
Figure 8. Pulse output characteristics and carrier concentration distribution of HiA-MCT and con-MCT
图 9 SB-MCT器件结构示意图及其等效电路图
Figure 9. SB-MCT device structure schematic and equivalent circuit diagram
图 10 SB-MCT与常规CS-MCT工作特性
Figure 10. Operation characteristics of SB-MCT and conventional CS-MCT
图 11 电压为1 100 V时MCT单次脉冲放电波形
Figure 11. MCT single pulse discharge waveform with voltage of 1 100 V
图 13 基于MCT的PFN电路脉冲放电波形
Figure 13. Pulse discharge waveform of Pulse Forming Network (PFN) circuit based on MCT
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