Bipolar ultra-wide spectrum pulse generator based on GaAs photoconductive switches
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摘要: 设计了一种基于砷化镓（GaAs）光电导开关（PCSS）的双极性固态脉冲功率源。通过对两级脉冲形成线（PFL）结构端反射系数的研究，分析了单极性正、负脉冲以及双极性脉冲产生的波过程，并采用PSpice工具开展电路仿真研究。研究了输入端电阻阻抗对脉冲拖尾的影响，提出了脉冲拖尾调制和脉冲宽度调制的方法。基于体结构GaAs PCSS和两级脉冲形成线结构，搭建了电阻隔离的脉冲充电实验平台，采用光路分时触发技术对光电导开关导通时序进行调控。实验结果表明，所研制的双极性固态脉冲功率源在2.5 kV偏压下可产生峰峰值达3.26 kV、脉宽5.6 ns、重复频率1 kHz的双极性纳秒冲激脉冲，验证了将雪崩GaAs PCSS与多级波拓扑结构PFL结合产生双极性纳秒冲激脉冲的可行性。Abstract: In this paper, a bipolar solid-state pulsed power source based on gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS) is designed. By studying the reflection coefficients at the structural end of the two-stage pulse forming line (PFL), the wave processes of single-stage positive and negative pulses as well as bipolar pulses are analysed, and the circuit simulation is carried out by using the PSpice tool. The effect of resistive impedance at the input end on pulse trailing is investigated, and the methods of pulse trailing modulation and pulse width modulation are proposed. Based on the vertically structured GaAs PCSS and the two-stage pulse-forming line structure, a resistor-isolated pulse charging experimental platform is constructed, and the optical path time-triggering technique is adopted to regulate the on-time sequence of the photoconductive switch. The experimental results show that the developed bipolar solid-state pulsed power source generator can produce bipolar nanosecond impulse with peak-to-peak values up to 3.26 kV, pulse widths of 5.6 ns, and a repetition frequency of 1 kHz under a bias voltage of 2.5 kV, which verifies the feasibility of generating bipolar nanosecond impulse by combining an avalanche GaAs PCSS with a multilevel wave topology PFL.
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Key words:
- photoconductive switch /
- avalanche mode /
- bipolar /
- solid-state /
- pulse power source
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图 1 结构示意与端反射系数点阵
Figure 1. Schematic structure with end-reflection coefficient dot matrix
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