基于延迟击穿特性的PIN二极管集约模型研究

张帅涛; 张慧博; 张自成

doi:10.11884/HPLPB202436.240252

基于延迟击穿特性的PIN二极管集约模型研究

doi: 10.11884/HPLPB202436.240252

张帅涛^1,,
张慧博^{1, 2, ,},
张自成^{1, 2}

1.
国防科技大学前沿交叉学科学院，长沙 410073
2.
脉冲功率激光技术国家重点实验室，长沙 410073

详细信息

作者简介:
张帅涛，shuaitaozhang@163.com

通讯作者:
张慧博，zhanghuibo89@outlook.com。

中图分类号: TM564
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- 文章访问数: 125
- HTML全文浏览量: 38
- PDF下载量: 22
- 被引次数: 0
出版历程
- 收稿日期: 2024-08-08
- 修回日期: 2024-10-22
- 录用日期: 2024-10-18
- 网络出版日期: 2024-10-28
- 刊出日期: 2024-11-01

Research on the intensive model of PIN diode based on delayed breakdown characteristics

Zhang Shuaitao^1
,,
Zhang Huibo^{1, 2
, ,},
Zhang Zicheng^{1, 2}

1.
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
2.
State Key Laboratory of Pulsed Power Laser Technology, Changsha 410073, China

摘要

摘要: 延迟击穿特性在实现PIN二极管开关快速导通方面起着至关重要的作用。面对延迟击穿导通时间短导致物理过程分析困难的挑战，设计并验证了一种基于PIN结构的二极管集约模型。首先设计了一个基于PIN结构的二极管仿真模型，通过TCAD软件对该模型进行求解，结果显示在上升沿为520 V/ns、幅值为1000 V的快速高压触发脉冲作用下，二极管的击穿电压可达到其静态反向击穿电压的1.76倍，之后结合导通过程中的载流子浓度变化和电场变化情况对所建立模型的准确性作了进一步验证。其次，基于双极载流子扩散理论并结合TCAD仿真得到的参数，采用拉普拉斯变换和Pade逼近方法，对二极管的基区参数进行了等效电路处理。在此基础上利用基区的等效电路参数以及电导调制效应，建立了基于延迟击穿特性的PIN二极管集约模型。在Pspice软件中对该模型进行了仿真验证，结果显示在相同的触发脉冲作用下，二极管器件导通过程与TCAD仿真结果基本一致。本研究为探索快速导通二极管的反向延迟击穿特性提供了一种简单可行的电路分析方法。
- 延迟击穿 /
- 二极管模型 /
- TCAD /
- 双极载流子扩散 /
- Pspice
Abstract: The delayed breakdown characteristic is crucial for achieving the rapid conduction in PIN diodes. This paper addresses the challenges associated with analyzing the physical process involved in delayed breakdown conduction, primarily due to its short duration. An integrated diode model based on the PIN structure has been designed and validated in the study. Firstly, a numerical simulation model of the diode was developed using TCAD. The simulation results indicated that, influenced by a rapid rising high-voltage trigger pulse with a rise time of 520 V/ns and a magnitude of 1000 V, the breakdown voltage of the diode could reach 1.76 times its static reverse breakdown voltage. The accuracy of the established model was further verified by examining changes in the carrier concentration and the evolution of the internal electric field during the conduction process. Secondly, based on bipolar carrier diffusion theory and the parameters obtained from TCAD simulations, the base region parameters of the diode were processed using the Laplace transform and Pade approximation method for equivalent circuit representation. Finally, utilizing the equivalent circuit parameters of the base region and considering conductance modulation effects, an integrated model of the PIN diode was constructed based on its delayed breakdown characteristics. This model was simulated and verified in Pspice software, demonstrating that under the same triggering pulse, the conduction process of the diode device is basically consistent with the TCAD simulation results. This study provides a straightforward and effective circuit analytic method for exploring the reverse delayed breakdown characteristics in rapidly conducting diodes.
- delayed breakdown /
- diode model /
- TCAD /
- bipolar carrier diffusion /
- Pspice

HTML全文

图 1 物理模型设置

Figure 1. Physical model settings

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图 2 混合电路仿真设置

Figure 2. Hybrid circuit simulation settings

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图 3 TCAD仿真得到的PIN 上电压波形和电流波形

Figure 3. Voltage and current waveforms on the PIN obtained from the TCAD simulation

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图 4 导通过程载流子浓度变化

Figure 4. Carrier concentration change in the conduction process

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图 5 导通过程电场变化情况

Figure 5. Variation of electric field at different times during the conduction process

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图 6 基区等效网络

Figure 6. Base area equivalent circuit network

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图 7 二极管集约模型

Figure 7. Diode intensive model

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图 8 Pspice仿真得到的导通电流随时间的变化

Figure 8. Change of the conduction current over time from the Pspice simulation

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表 1 等效电路参数设置

Table 1. Equivalent circuit parameter settings

R_J1/Ω R_J2/Ω R_J3/Ω R_J4/Ω R_J5/Ω R_lim/mΩ R_epi/Ω C_J1/µF C_J2/µF C_J3/µF

1 5 9 143 91 1.8 0.08 7.5 1.5 0.83

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