Research on the intensive model of PIN diode based on delayed breakdown characteristics
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摘要: 延迟击穿特性在实现PIN二极管开关快速导通方面起着至关重要的作用。面对延迟击穿导通时间短导致物理过程分析困难的挑战，设计并验证了一种基于PIN结构的二极管集约模型。首先设计了一个基于PIN结构的二极管仿真模型，通过TCAD软件对该模型进行求解，结果显示在上升沿为520 V/ns、幅值为
1000 V的快速高压触发脉冲作用下，二极管的击穿电压可达到其静态反向击穿电压的1.76倍，之后结合导通过程中的载流子浓度变化和电场变化情况对所建立模型的准确性作了进一步验证。其次，基于双极载流子扩散理论并结合TCAD仿真得到的参数，采用拉普拉斯变换和Pade逼近方法，对二极管的基区参数进行了等效电路处理。在此基础上利用基区的等效电路参数以及电导调制效应，建立了基于延迟击穿特性的PIN二极管集约模型。在Pspice软件中对该模型进行了仿真验证，结果显示在相同的触发脉冲作用下，二极管器件导通过程与TCAD仿真结果基本一致。本研究为探索快速导通二极管的反向延迟击穿特性提供了一种简单可行的电路分析方法。Abstract: The delayed breakdown characteristic is crucial for achieving the rapid conduction in PIN diodes. This paper addresses the challenges associated with analyzing the physical process involved in delayed breakdown conduction, primarily due to its short duration. An integrated diode model based on the PIN structure has been designed and validated in the study. Firstly, a numerical simulation model of the diode was developed using TCAD. The simulation results indicated that, influenced by a rapid rising high-voltage trigger pulse with a rise time of 520 V/ns and a magnitude of1000 V, the breakdown voltage of the diode could reach 1.76 times its static reverse breakdown voltage. The accuracy of the established model was further verified by examining changes in the carrier concentration and the evolution of the internal electric field during the conduction process. Secondly, based on bipolar carrier diffusion theory and the parameters obtained from TCAD simulations, the base region parameters of the diode were processed using the Laplace transform and Pade approximation method for equivalent circuit representation. Finally, utilizing the equivalent circuit parameters of the base region and considering conductance modulation effects, an integrated model of the PIN diode was constructed based on its delayed breakdown characteristics. This model was simulated and verified in Pspice software, demonstrating that under the same triggering pulse, the conduction process of the diode device is basically consistent with the TCAD simulation results. This study provides a straightforward and effective circuit analytic method for exploring the reverse delayed breakdown characteristics in rapidly conducting diodes.-
Key words:
- delayed breakdown /
- diode model /
- TCAD /
- bipolar carrier diffusion /
- Pspice
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随着科学技术的发展，核技术具有零碳排放、能源独立、安全等诸多优势，在人类社会中的地位越来越重要。然而，核辐射事故却为核技术发展迅速蒙上了一层阴影。1986年，苏联切尔诺贝利核电站发生了迄今为止人类历史上最严重的核辐射事故[1]。2011年，日本东北海岸发生了里氏9.0级的强烈地震和海啸，造成了福岛第一核电站的1～3号机组反应堆熔毁[2]。由于反应堆内部高温和高辐射等极端环境，人类无法直接进入进行勘察和处置工作，因此在福岛事故中使用了多种类型和功能的机器人。光纤激光器具有高功率、高光束质量，光束可以远距离柔性传输等优点，可以用于无人区开展激光切割救援等工作[3]。比如Shin等人研究了用10 kW光纤激光器拆除核设施的150 mm厚的厚钢板和大型管道的切割性能[4]。当然，光纤激光器在辐射环境中也会受到影响[5]，高能射线会导致增益光纤产生色心等各类缺陷，这些缺陷引起的额外光吸收增加了传输损耗，降低了光纤激光器性能。
课题组基于光纤激光器存在的自漂白效应，利用60CO辐照源探索不同辐照剂量率下的光纤激光器暗化与自漂白的平衡关系。实验先采用低功率光纤振荡器进行不同辐照剂量率下激光器输出功率演化和去辐照后自漂白研究。使用的光纤激光振荡器实验结构如图1所示，谐振腔由常规商业掺镱光纤（YDF）、高反射光纤光栅（HR-FBG）、低反射光纤光栅（OC-FBG）构成，中心波长为976 nm的泵浦源（LDs）通过前向（2+1）×1泵浦信号合束器（FPSC）注入到谐振腔中，激光经过包层光滤除器（CLS）后由光纤端帽（QBH）扩束输出。
首先，利用较高辐照剂量率研究在去辐照后的自漂白效应，结果如图2（a）所示。图2（a）的(I)为未辐照阶段，持续时间为680 s，由于水冷机周期性制冷使得功率计温度周期变化导致测试激光功率也存在周期变化，激光器功率起伏为1.44%；需要注意的是，这个是主要功率测量误差导致，并不是激光器本身功率起伏。图2（a）中(II)为辐照阶段，在总辐照时间298 s内，辐照总剂量为14 900 rad，激光器输出功率从150 W下降至105 W。图2（a）的(III)为去辐照后的自漂白阶段，在光纤激光器的泵浦光子与热效应的共同作用下，激光器输出功率从118 W恢复di至145 W，与初始功率相差仅5 W，表明自漂白效应可以较为有效地恢复由于辐照导致的激光功率下降。
图 2 光纤激光器在辐照环境下的输出特性Figure 2. Output characteristics of the optical fiber laser in an irradiated environment然后，为了探索不同剂量率的自漂白与在线辐照相互作用是否可以达到平衡，开展了不同剂量率的对比研究，结果如图2（b）所示。图2（b）中，总辐照剂量为2 400 rad，红色、蓝色曲线分别对应辐照剂量率为50 rad/s、1 rad/s时激光器归一化输出功率演化情况；在辐照剂量率为50 rad/s时，激光输出功率下降了3%；在辐照剂量率1 rad/s时，功率起伏1.22%，考虑到这里的周期性起伏主要由于水冷机周期性制冷导致，可以认为在低辐照剂量率下，光纤激光器自漂白导致的功率提升与辐照导致的功率下降基本达到平衡。
进一步地，基于图2（b）的实验结果，我们验证了1 kW级光纤激光器中自漂白与辐照平衡的实验现象。在辐照剂量率为0.1 rad/s时，激光器输出激光功率曲线演化如图2（c）所示。从实测功率曲线来看，在总辐照剂量为190 rad的整个辐照过程中，光纤激光器的输出功率都稳定在1 050 W以上，即使考虑前述由于水冷机导致的功率变化，激光器的功率起伏在1.79%以内。如果不考虑水冷机周期性制冷影响，激光器的功率起伏在0.66%以内。
实验首次验证了在一定辐照剂量率下，光纤激光器自漂白效应导致的激光功率提升可以平衡辐照效应导致的功率下降，为相关场景应用的光纤激光器设计提供了有效支撑。后续，我们将继续深入相关研究，探索不同类别、不同结构激光器辐照与自漂白平衡的机理、阈值和可能的应用。
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图 3 TCAD仿真得到的PIN 上电压波形和电流波形
Figure 3. Voltage and current waveforms on the PIN obtained from the TCAD simulation
图 5 导通过程电场变化情况
Figure 5. Variation of electric field at different times during the conduction process
图 8 Pspice仿真得到的导通电流随时间的变化
Figure 8. Change of the conduction current over time from the Pspice simulation
表 1 等效电路参数设置
Table 1. Equivalent circuit parameter settings
RJ1/Ω RJ2/Ω RJ3/Ω RJ4/Ω RJ5/Ω Rlim/mΩ Repi/Ω CJ1/µF CJ2/µF CJ3/µF 1 5 9 143 91 1.8 0.08 7.5 1.5 0.83 
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[1] 王欢, 乔汉青, 程骏, 等. 基极触发的雪崩晶体管导通机理[J]. 半导体技术, 2024, 49(5):432-441Wang Huan, Qiao Hanqing, Cheng Jun, et al. Conduction mechanism of base-triggered avalanche transistors[J]. Semiconductor Technology, 2024, 49(5): 432-441 [2] 马振宏, 刘振, 殷胜勇, 等. 高压纳秒脉冲电场消融黑色素瘤细胞实验研究[J]. 浙江大学学报(工学版), 2021, 55(6):1168-1174,1198 doi: 10.3785/j.issn.1008-973X.2021.06.018Ma Zhenhong, Liu Zhen, Yin Shengyong, et al. Experimental study on melanoma cell ablation by high-voltage nanosecond pulsed electric field[J]. Journal of Zhejiang University (Engineering Science), 2021, 55(6): 1168-1174,1198 doi: 10.3785/j.issn.1008-973X.2021.06.018 [3] 梁琳, 颜小雪, 黄鑫远, 等. 半导体脉冲功率开关器件综述[J]. 中国电机工程学报, 2022, 42(23):8631-8651Liang Lin, Yan Xiaoxue, Huang Xinyuan, et al. Review on semiconductor pulsed power switching devices[J]. Proceedings of the CSEE, 2022, 42(23): 8631-8651 [4] Mesyats G A, Yalandin M I. High-power picosecond electronics[J]. Physics-Uspekhi, 2005, 48(3): 211-229. doi: 10.1070/PU2005v048n03ABEH002113 [5] Grekhov I V, Kardo-Sysoev A F, Kostina L S, et al. High-power subnanosecond switch[J]. Electronics Letters, 1981, 17(12): 422-423. doi: 10.1049/el:19810293 [6] Grekhov I V, Kardo-Sysoev A F. Subnanosecond current drops in delayed breakdown of silicon p-n junctions[J]. Soviet Technical Physics Letters, 1979, 5(8): 395-396. [7] Ivanov M S, Podolska N I, Rodin P B. Quasi-streamer mode of delayed avalanche breakdown initiated by technological imperfections[J]. Journal of Physics: Conference Series, 2017, 816: 012033. doi: 10.1088/1742-6596/816/1/012033 [8] Rodin P B, Ivanov M. Spatiotemporal modes of fast avalanche switching of high-voltage layered semiconductor structures: from subnano to picosecond range[J]. Journal of Applied Physics, 2020, 127: 044504. doi: 10.1063/1.5097831 [9] Ivanov M, Brylevskiy V, Smirnova I, et al. Picosecond-range switching of high-voltage Si diode due to the delayed impact-ionization breakdown: experiments vs simulations[J]. Journal of Applied Physics, 2022, 131: 014502. doi: 10.1063/5.0077092 [10] Peng Xin, Liu Yong, Feng Hao, et al. Analysis and characterization of the Punchthrough n-p-n diode for hard switching power control applications[J]. IEEE Transactions on Electron Devices, 2023, 70(9): 4525-4531. doi: 10.1109/TED.2023.3294358 [11] Zhang Manhong. A modified finite difference model to the reverse recovery of silicon PIN diodes[J]. Solid-State Electronics, 2020, 171: 107839. doi: 10.1016/j.sse.2020.107839 [12] Brylevskiy V, Podolska N, Smirnova I, et al. Picosecond-range avalanche switching initiated by a steep high-voltage pulse: Si bulk samples versus layered pn junction structures[J]. Physica Status Solidi (b), 2019, 256: 1800520. doi: 10.1002/pssb.201800520 [13] Okuto Y, Crowell C R. Threshold energy effect on avalanche breakdown voltage in semiconductor junctions[J]. Solid-State Electronics, 1975, 18(2): 161-168. doi: 10.1016/0038-1101(75)90099-4 [14] Potbhare S, Goldsman N, Lelis A, et al. A physical model of high temperature 4H-SiC MOSFETs[J]. IEEE Transactions on Electron Devices, 2008, 55(8): 2029-2040. doi: 10.1109/TED.2008.926665 [15] Brylevskiy V I, Smirnova I A, Podolska N I, et al. Experimental observation of delayed impact-ionization avalanche breakdown in semiconductor structures without p-n junctions[J]. Technical Physics Letters, 2018, 44(2): 160-163. doi: 10.1134/S1063785018020177 [16] 黄鑫远. 快速离化晶体管优化设计和失效分析研究[D]. 武汉: 华中科技大学, 2022: 67-68Huang Xinyuan. Study on optimal design and failure analysis of fast ionization dynistor[D]. Wuhan: Huazhong University of Science and Technology, 2022: 67-68 [17] 周瑜. 4H-SiC等离子体波开关器件研究[D]. 西安: 西安电子科技大学, 2022: 37-39Zhou Yu. Research on 4H-SiC plasma wave switching devices[D]. Xi'an: Xidian University, 2022: 37-39 [18] 张佳佳, 叶尚斌, 张逸成, 等. 基于拉氏变换的变温度PIN二极管动态建模[J]. 电工技术学报, 2016, 31(1):139-146 doi: 10.3969/j.issn.1000-6753.2016.01.017Zhang Jiajia, Ye Shangbin, Zhang Yicheng, et al. Temperature-variable dynamic modeling of PIN diode based on Laplace transform[J]. Transactions of China Electrotechnical Society, 2016, 31(1): 139-146 doi: 10.3969/j.issn.1000-6753.2016.01.017 [19] 盛定仪, 杨耿, 谭吉春, 等. 功率PIN二极管PSpice子电路模型[J]. 现代电子技术, 2008(6):141-143 doi: 10.3969/j.issn.1004-373X.2008.06.049Sheng Dingyi, Yang Geng, Tan Jichun, et al. A new power PIN diode PSpice subcircuit Model[J]. Modern Electronics Technique, 2008(6): 141-143 doi: 10.3969/j.issn.1004-373X.2008.06.049 [20] 李鑫, 罗毅飞, 段耀强, 等. 一种基于集总电荷的大功率PIN二极管改进电路模型[J]. 电工技术学报, 2019, 34(3):506-515Li Xin, Luo Yifei, Duan Yaoqiang, et al. An improved lumped-charge circuit model for high power PIN diode[J]. Transactions of China Electrotechnical Society, 2019, 34(3): 506-515 -
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