具有快前沿的10 kV纳秒级脉冲电源的研制

王亿明; 王凌云; 张东东; 周媛; 王志强; 刘征; 孔佑军

doi:10.11884/HPLPB202537.240406

具有快前沿的10 kV纳秒级脉冲电源的研制

doi: 10.11884/HPLPB202537.240406

1.
大连理工大学电气工程学院，辽宁大连 116024
2.
中国工程物理研究院流体物理研究所，四川绵阳 621900
3.
天津职业技术师范大学自动化与电气工程学院，天津 300222
4.
国网综合能源服务集团有限公司，北京 100052

基金项目: 国家自然科学基金项目(92166106)

详细信息

作者简介:
王亿明，15724592197@163.com

通讯作者:
张东东，zhdd80@dlut.edu.cn。

中图分类号: TN78；TN386.1
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- 被引次数: 0
出版历程
- 收稿日期: 2024-11-27
- 修回日期: 2025-02-11
- 录用日期: 2025-02-11
- 网络出版日期: 2025-03-01
- 刊出日期: 2025-03-15

Development of 10 kV nanosecond pulse power supply with fast leading edge

1.
School of Electrical Engineering, Dalian University of Technology, Dalian 116024, China
2.
Institute of Fluid Physics, CAEP, Mianyang 621900, China
3.
Automation and Electrical Engineering, Tianjin University of Technology and Education, Tianjin 300222, China
4.
State Grid Integrated Energy Service Group Co., Ltd., Beijing 100052, China

摘要

摘要: 随着SiC MOSFET器件快速开关特性的发展，其在需要高速、灵活高压脉冲输出的电路系统中得到广泛应用。研究表明，SiC MOSFET的导通时间主要受栅极驱动技术及其实现方式的影响，因此相关研究多聚焦于其栅极驱动方法优化。该研究通过对SiC MOSFET栅极驱动回路进行参数测试与优化设计，并将其应用于超快导通型SiC MOSFET器件，以实现导通时间的显著缩减。为验证优化效果，研究团队设计并制备了栅极升压驱动器的优化原型进行实验测试。测试数据表明，经过优化的栅极驱动电压调节方法有效提升了器件性能，在10 kV电压等级与50 A电流条件下，脉冲电压上升沿时间可达27 ns。
- 固态开关串联 /
- 驱动回路参数优化 /
- 快前沿 /
- SiC MOSFET
Abstract: With the development of fast switching characteristics of SiC MOSFET devices, they are widely used in circuit systems that require high-speed and flexible high-voltage pulse output. Studies have shown that the on-time of SiC MOSFETs is mainly affected by the gate drive technology and its implementation. Accordingly, related studies have mostly focused on the optimization of its gate drive method. In this study, a SiC MOSFET gate drive circuit was parametrically tested and optimized, and applied to ultra-fast conduction SiC MOSFET devices to achieve a significant reduction in on-time. To verify the optimization effect, the research team designed and prepared an optimized prototype of the gate boost driver for experimental testing. The test data show that the optimized gate drive voltage regulation method effectively improves the device performance, with a pulse voltage rising edge time of up to 27 ns under 10 kV voltage level and 50 A current conditions.
- solid-state switching in series /
- driving loop parameter optimization /
- fast front /
- SiC MOSFET

HTML全文

图 1 开关串联电路脉冲前沿影响因素

Figure 1. Influencing factors of pulse front

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图 2 高压快前沿脉冲总体方案

Figure 2. High voltage fast front pulse overall scheme

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图 3 功率放大电路

Figure 3. Power amplifier circuit

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图 4 三极管加速开关电路

Figure 4. Triode acceleration switching circuit

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图 5 自举电容与隔离电源式驱动对比

Figure 5. Bootstrap capacitor versus isolated power drive

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图 6 同一个磁芯不同匝比的驱动波形图

Figure 6. Driving waveform diagram of the same magnetic core with different turns

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图 7 不同款磁芯在相同匝比时的驱动波形

Figure 7. Driving waveform of different magnetic cores at the same turn ratio

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图 8 自维持电路状态

Figure 8. Self-sustaining circuit status

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图 9 自维持电路输出波形

Figure 9. Self-sustaining circuit output waveform

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图 10 负载侧被动均压缓冲电路

Figure 10. Passive equalizing buffer circuit on load side

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图 11 三种状况下两开关漏源电压

Figure 11. Drain-source voltage of two switches under three conditions

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图 12 三种情况下负载脉冲电压波形

Figure 12. Load pulse voltage waveform in three cases

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图 13 开关串联SiC MOSFET测试电路实验平台

Figure 13. Switch series SiC MOSFET test circuit experimental platform

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图 14 栅源信号同步性测试

Figure 14. Gate-source signal synchronization test

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图 15 动态电压测试

Figure 15. Dynamic voltage test

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图 16 高重频实验和脉宽变换实验

Figure 16. High repetition frequency experiment and pulse width transformation experiment

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图 17 高压脉冲发生器测试电路

Figure 17. High voltage pulse generator test circuit

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图 18 高压脉冲发生器测试结果

Figure 18. High voltage pulse generator test results

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图 19 10 kV下不同驱动电压的负载脉冲电压波形

Figure 19. Load pulse voltage waveform of different driving voltages at 10 kV level

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表 1 两款芯片性能对比

Table 1. Comparison of the performance of the two chips

chip type	drive channel	drive current/A	rise time/ns	drive voltage/V
2EDF9275	2	4	6.5	20
IXDN614	1	14	25.0	4.5～35

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表 2 三款磁环型号

Table 2. Three magnetic ring models

core model	core material	core model	core size
Ⅰ	nanocrystal	CMC020012008H	20 mm×12 mm×8 mm
Ⅱ	nanocrystal	CMC030020010H	30 mm×20 mm×10 mm
Ⅲ	manganese-zinc ferrite	B64290L0632X035	20 mm×12 mm×8 mm

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表 3 实验对照组信息

Table 3. Control group information

experiment number	core model	ratio
1	Ⅰ	1∶1
2	Ⅰ	1∶2
3	Ⅰ	4∶4
4	Ⅰ	6∶6
5	Ⅱ	1∶1
9	Ⅲ	1∶1

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表 4 不同脉冲电源的性能比较

Table 4. Performance comparison of different pulse power supplies

type	reference	voltage level/kV	load current/A	rise time/ns
solid-state switch series	Shi et al^[13]	2	40	40
Marx generator	Wang et al^[17]	2	20	20
solid-state switch series	Li et al^[24]	5	17	45.8
Marx generator	Wang et al^[25]	10	25	100
this text		10	50	27

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