Voltage transfer efficiency of Blumlein- pulse forming networks based on photoconductive semiconductor switches
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摘要: 为了在高阻负载上获得高效率的重复频率平顶高压脉冲输出，开展了影响基于光导开关的Blumlein型脉冲形成网络电压传输效率因素的初步实验研究。以陶瓷电容、铝条和GaAs光导开关构成全固态Blumlein型脉冲形成网络（BPFN），采用气体间隙进行了设计参数的验证实验，在匹配负载上研究了光导开关工作场强、激光触发能量与BPFN电压转换效率的关系。设计的BPFN阻抗7.8 ，电长度32.6 ns，实验表明光导开关较高的导通电阻是影响PCSS-BPFN电压传输效率的主要因素。当触发激光能量30.4 mJ，工作场强25.1 kV/cm时，获得电压效率83.2%，相应最小导通电阻1.89 ;在触发激光能量3.5 mJ时，为了使阻抗为7.8 的BPFN在匹配负载上达到75%以上电压传输效率，应至少使光导开关工作场强为25.1 kV/cm，相应最小导通电阻2.88 。
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关键词:
- Blumlein型脉冲形成网络 /
- 光导开关 /
- 电压传输效率 /
- 非线性模式
Abstract: The factors affecting the voltage transfer efficiency of Blumlein pulse forming networks (PFNs) based on photoconductive semiconductor switch (PCSS) were preliminarily studied in experiment to get rectangle high voltage pulses on high impedance loads with high energy transfer efficiency and high repetition rate. The Blumlein-PFN is composed of the ceramic capacitor,aluminum strip and GaAs-PCSS. The Blumlein-PFNs impedance is 7.8 with an electric length of 32.6 ns. The relations of voltage transfer efficiency to PCSS electric field and laser energy were studied on a matched load. Experiment results shows that high on-resistance is the main factor affecting the voltage transfer efficiency. When the electric field is 25.1 kV/cm,the efficiency is 75.6% with an on-resistance of 2.88 at a laser energy of 3.5 mJ and 83.2% with an on-resistance of 1.89 at a laser energy of 30.4 mJ. -
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