Ablating process with 355 nm laser for amorphous silicon thin-film solar cell
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摘要: 为提高电池的光电转换效率，通过改善激光刻蚀工艺，采用355 nm紫外纳秒激光分别进行了ZnO：Al薄膜（AZO）刻蚀（P1）、非晶硅薄膜（-Si）刻蚀（P2）和背电极刻蚀（P3）研究。采用万用表测量P1隔离电阻，采用电子扫描显微镜（SEM）和三维激光扫描仪测量刻槽的微结构和三维成像，激光拉曼散射光谱检测非晶硅薄膜刻蚀边缘的晶化。实验结果表明，当刻蚀速度600 mm/s，重复频率40 kHz，功率1.74 W的紫外激光刻蚀ZnO：Al薄膜时，刻槽的隔离效果最佳，达20 M; 紫外激光刻蚀能够有效地减小激光热效应引起的热影响和刻槽边缘的晶化范围，提高非晶硅薄膜电池的性能。Abstract: In order to improve the efficiency of solar cell, we make some changes of laser ablation. This study focuses on using 355 nm laser with nanosecond pulse duration to ablate ZnO:Al (P1), -Si (P2), and back contact (P3) selectively. Isolation resistances are measured by multimeter. Scanning electron microscope and 3D laser scan microscope are used to measure ablation grooves microstructure and 3D images. Laser Raman spectroscopy is employed to detect the crystallization of -Si in the edge of ablation. The experimental results show that the effect of groove ablated by 355 nm laser whose isolation resistance reaches up to 20 M is best when a 600 mm/s, 40 kHz, 1.74 W laser works on its focal position, and the ablation with 355 nm laser can effectively decrease the influence caused by laser heating effect and the crystallization area of -Si in the edge of ablation.
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Key words:
- laser ablation /
- thin-film amorphous silicon /
- heating effect /
- isolation resistance /
- crystallization
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