Abstract: This paper studies the initiated damage threshold, the damage morphology and the subsequent damage growth on fused silicas input-surface and exit-surface under picosecond laser irradiation at 355 nm. Defects induced fluorescence on surface of the optical component is observed. The results demonstrate a significant dependence of the initiated damage on pulse duration and surface defects, and that of the damage growth on self-focusing, sub-surface defects. The damage-threshold is 3.98 J/cm2 of input surface and 2.91 J/cm2 of exit surface. The damage morphologies are quite different between input surface and exit surface. Slow growth behavior appears for the diameter of exit-surface and linear growth one for the depth of exit-surface in the lateral side of damage site with the increase of shot number. Defects have changed obviously compared with nanosecond laser damage in the damage area. Several main reasons such as electric intensification and self-focusing for the observed initiated damage and damage growth behavior are discussed.