Influence of sputtering power on components and mechanical properties of boron carbide films
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摘要: 采用射频磁控溅射技术，在不同溅射功率条件下制备了碳化硼薄膜，并用X射线光电子能谱(XPS)和傅里叶变换红外吸收光谱(FT-IR)对碳化硼薄膜的组分进行了定量表征，分析了功率变化对碳化硼组分的影响。利用纳米压入仪通过连续刚度法(CSM)对碳化硼薄膜的硬度和模量等力学性能进行了分析。研究表明：随着功率的增大，硼与碳更易结合形成BC键，在功率增大到250 W时，BC键明显增多；在250 W时，硼与碳的原子分数比出现了最大值5.66；碳化硼薄膜的硬度与模量都随功率的增大呈现出先增大后减小的趋势，且在250 W时均出现了最大值，分别为28.22 GPa和314.62 GPa。Abstract: Boron carbide films were fabricated by radio frequency magnetron sputtering at different sputtering powers. The structure and components of the boron carbide films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Using MTS Nano Indenter XP with CSM method, the hardness and modulus of the boron carbide films were analyzed. The results show that B prefers to combining with C to form BC bond as the RF power increases. When the sputtering power reaches 250 W, the number of BC bonds is the most, and the atomic concentration ratio between B and C reaches to the maximum of 5.66. Both the hardness and modulus of the boron carbide films increase firstly and then decrease with the sputtering powers increasing. Both of them reach to the maximum of 28.22 GPa and 314.62 GPa, respectively.
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