High power 905 nm InGaAs tunnel junction series stacked semiconductor lasers
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摘要: 设计出了隧道结串联叠层半导体激光器结构，采用分子束外延进行激光器材料的外延生长，材料经过光刻、腐蚀、欧姆接触、解理、腔面镀高反射/减反射膜、焊装等工艺，制作成条宽200 m、腔长800 m 的半导体激光器。两隧道结激光器在脉冲宽度100 ns，重复频率10 kHz，30 A工作电流下输出功率达到80 W，峰值发射波长为905.6 nm，器件的阈值电流为0.8 A，水平和垂直方向的发散角分别为7.8和25。Abstract: We designed the structure of tunnel junction series stacked semiconductor lasers and grew the laser materials by molecular beam epitaxy (MBE). We fabricated the 200 m wide, 800 m cavity length laser diode chips by the process of photo-lithography, etching, Ohmic contact, cleaving, AR/HR coating and die bonding. The output power of the two-tunnel-junction device reaches 80 W under the condition of 100 ns pulsed width, 10 kHz repeat frequency, and 30 A pulsed current. The threshold current is about 0.8 A, the peak of spectrum is 905.6 nm, and the far-field divergence in the directions parallel to junction plane and perpendicular to junction plane is 7.8 and 25, respectively.
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Key words:
- high power /
- strained quantum well /
- tunnel junction /
- semiconductor lasers
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