SiC-pn结二极管α粒子辐射效应
Irradiation effect of alpha particles on pn-SiC diode
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摘要: 为了研究6H-SiC材料制作的pn结二极管探测器的辐照特性，采用蒙卡程序模拟研究了4.3和1.8 MeV能量的α粒子在辐照探测器中的物理过程。介绍了二极管探测器的工艺制作和物理参数，根据其结构建立了仿真模型，利用蒙卡程序进行了α粒子照射的仿真研究。研究结果直观地反映了α粒子在探测器中的输运情况。α粒子在探测器中的辐射效应主要是电离作用，电离产生的电子-空穴对形成一定的分布。给出了α粒子在探测器中的电离能量损失分布及二极管探测器的电荷收集效率表达式。Abstract: The mechanism is studied by Monte Carlo method while 1.8 MeV and 4.3 MeV alpha particles irradiating the pn junction 6H-SiC diode. In the first the process and parameters of the diode detector are introduced, and then a simulation model is established according to the structure of the detector. The research results reflect the whole transport process of alpha particles in the detector directly. The main effect of alpha particles is ionization, which produces electron-hole pairs with certain distribution. The energy loss distribution of ionization and the charge collection efficiency equation of the diode detector are provided in the end.
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Key words:
- 6h-sic /
- diode /
- alpha particles /
- irradiation effects
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