不同方法DKDP晶体生长和损伤阈值
Growth and laser damage threshold of DKDP crystal grown by different methods
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摘要: 生长方法是影响DKDP晶体生长和光损伤阈值的一个重要因素。分别采用传统降温法和点籽晶快速生长法，利用同种原料从氘化程度为85%的溶液生长了DKDP晶体，并选取部分Ⅱ类3倍频晶片进行3倍频光损伤阈值和透过性能测试。实验表明，不同生长方法对DKDP晶体的损伤阈值以及DKDP晶体的生长速度的影响效果正好相反，即由于生长溶液过饱和度的差别，点籽晶快速生长法晶体生长速度为传统方法的10倍，但晶体损伤阈值下降了50%，且紫外波段透过性能下降明显。Abstract: Growth method is the dominating factor which greatly influences the growth and the laser damage threshold of the DKDP single crystal. In this paper, DKDP crystals were grown from 85%-deuterated solution by using traditional temperature-reduction method and point-seed rapid growth method respectively. Optical transmission and laser damage in unconditioned type Ⅱ tripler-cut DKDP crystals have been studied. It is found that, due to super-saturation effect, by using point-seed rapid growth method, the growth rate of DKDP is about 15 mm/day, which is ten times that by using traditional growth method. But more metallic ionic impurities and inclusions lead to the deterioration in the transmission spectra and laser induced damage threshold.
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Key words:
- dkdp crystal /
- laser damage threshold /
- crystal growth /
- icf
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