伽玛辐照对SiGe异质结双极型晶体管的集电极电流和厄尔利电压的影响

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Gamma irradiation effects on collector current and Early voltage of SiGe heterojunction bipolar transistor

1.
College of Physical Science and Technology,Sichuan University,Chengdu 610064,China;
2.
Key Laboratory of Microelectronics Technology of Sichuan Province,Chengdu 610064,China;
3.
National Laboratory of Analog Integrated Circuits,Chongqinq 400060,China

摘要: 研究了伽玛辐照效应对SiGe异质结双极型晶体管的集电极电流和厄尔利电压的影响。经过104 Gy的伽玛总剂量辐照后，集电极电流和厄尔利电压均增加。另外，辐照后发射结和极电结的开启电压和击穿电压也均有一定程度的减小。以上这些变化均是由于辐照产生的缺陷引起发射区和集电区有效掺杂浓度减小所致。
- 异质结双极型晶体管 /
- 自建电势 /
- 掺杂浓度 /
- 集电极电流 /
- 厄尔利电压 /
- 伽玛辐照
Abstract: The effects of gamma irradiation on collector current and Early voltage of silicon-germanium (SiGe) heterojunction bipolar transistor are investigated. After 104 Gy(Si) total dose irradiation, increases of the collector current and Early voltage are observed. Besides, both the threshold voltages and the breakdown voltages of the emitter-base and the collector-base junctions decrease. All the changes are thought to be mainly due to the reduction of effective carrier concentrations in the emitter and collector regions caused by radiation-induced defects.
- heterojunction bipolar transistor /
- built-in electric potential /
- doping concentration /
- collector current /
- early voltage /
- gamma irradiation

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