Abstract: The fundamental equations of Fourier heat transfer model and non-Fourier heat transfer model were numerically solved, with the finite difference method. The relative changes between temperature curves of the two heat transfer models were analyzed under laser irradiation with different pulse widths of 10 ns, 1 ns, 100 ps, 10 ps. The impact of different thermal relaxation time on non-Fourier model results was discussed. For pulses of pulse width less than or equal to 100 ps irradiating silicon material, the surface temperature increases slowly and carrier effect happens, which the non-Fourier model can reflect properly. As for general material, when the pulse width is less than or equal to the thermal relaxation time of material, carrier effect occurs. In this case, the non-Fourier model should be used.