Influence of HEMP pulse width on burnout effects of RS flip-flops

The burnout effect of RS flip-flops under the injection of HEMP is studied by using our two-dimensional mixed-mode circuit and semiconductor device simulator. The simulation results show that the burnout region is in the channel between gate and drain terminals in the n-channel enhancement mode MOSFETs of the RS flip-flop. The results also show that the power threshold for burnout decreases when the pulse width increases. The difference of the thresholds is not significant when the pulse width is larger than 80 ns. A theoretical model based on the simulation results and the heat equation to assess the relationship between pulse width and burnout threshold of RS flip-flops is proposed and the validity of the model is verified by the simulation results.