Response of silicon detecting chip to X-band electromagnetic wave modes in circular waveguide

Electric field response of silicon detecting chip within circular waveguide to several usual electromagnetic wave modes in X-band is studied numerically and theoretically. Based on the hot carrier effect under high electric field, a silicon detecting structure is proposed to measure the high power microwave (HPM) pulse within circular waveguide in real time. Then cross-sectional electric field distributions are simulated and analyzed when HPMs with TE11 mode (with two orthogonal polarization directions), TM01 mode and TE01 mode are applied respectively by using the three dimensional parallel finite-difference time-domain (FDTD) method. Results of different modes show that the transverse electric fields are all dominated by radial components, and the amplitude ratios between radial and angular components are probably 10. The standing wave ratio of transverse electric field is no more than 1.3. At last, the sensitivities of the detecting structure for different modes in circular waveguide are derived. Theoretical analysis indicates that the maximum enduring power of the detecting structure, which can reach as high as 422 MW, is dependent upon modes, and its response time is in the picosecond-level. It attests the feasibility of on-line measurements of X-band HPM pulses employing the designed detecting structure