Band structure and spontaneous emission spectrum of InGaAsSb/GaSb quantum well

This paper presents a theoretical study of influence of In content on the InGaAsSb/GaSb quantum well structure. The accurate relationship between the band gap and the In content is given. The band offset as functions of the In content is calculated numerically. The results show that as the In content increase, the band gap of InGaAsSb decreases accordingly, but the amount of stress enhances, the band edge shift gets larger, and the band offset of InGaAsSb/GaSb reduces. Meanwhile, The peak wavelength of spontaneous emission spectra exhibits redshift and the gain decreases with the increase of the In content. This proves that it is feasible to adjust and control the band gap by altering the In content, which is useful for tailoring the material property and the photonics device design.