Comparative analysis on thermal damage characteristics of ZnS and SiO₂ induced by short pulse laser

The thermal damages of the frequently-used infrared optical materials ZnS and SiO2 induced by infrared short pulse laser were studied. The thermal effect of ZnS and SiO2 irradiated by the same laser were analyzed. The thermal effects of ZnS and SiO2 irradiated by different laser were respectively analyzed. The following conclusions were drawn. The temperature on the surface of SiO2 rose faster than that of ZnS irradiated by the infrared laser. The temperature under the surface of SiO2 rose slower than that of ZnS. Peak temperature of SiO2 was higher than the latter. The depth of the region where its temperature was above normal in the SiO2 was shallower than that in the ZnS. Temperature of materials in the case of picosecond pulse laser rose faster and higher than that in the case of nanosecond pulse laser for the energy of picosecond pulse laser was more concentrated. As the pulse width diminished, the single pulse energy of laser nonlinear decreased and the rate of change grew, which made the peak temperature achieve melting point.