Zhao Yan, Ma Yichao, Wu Weidong. Effect of different packaging techniques on high-frequency performance of Schottky diodes[J]. High Power Laser and Particle Beams, 2015, 27: 013101. doi: 10.11884/HPLPB201527.013101
Citation:
Zhao Yan, Ma Yichao, Wu Weidong. Effect of different packaging techniques on high-frequency performance of Schottky diodes[J]. High Power Laser and Particle Beams, 2015, 27: 013101. doi: 10.11884/HPLPB201527.013101
Zhao Yan, Ma Yichao, Wu Weidong. Effect of different packaging techniques on high-frequency performance of Schottky diodes[J]. High Power Laser and Particle Beams, 2015, 27: 013101. doi: 10.11884/HPLPB201527.013101
Citation:
Zhao Yan, Ma Yichao, Wu Weidong. Effect of different packaging techniques on high-frequency performance of Schottky diodes[J]. High Power Laser and Particle Beams, 2015, 27: 013101. doi: 10.11884/HPLPB201527.013101
Schottky diode is the critical component of terahertz receiver. The Schottky diode simulation model is established in HFSS to obtain the S-parameters of the Schottky diode in 0-120 GHz. The accuracy of the diode simulation model is proved by comparing S-parameters between simulated and measured results. The general packaging model and flip-chip packaging model of Schottky diodes are established, and two different S-parameters, -3 dB bandwidth and phase coherence are analyzed. The results show that the flip-chip packaging is more appropriate for THz Schottky diode than the general packaging, which can bring great improvement of electrical properties of Schottky diode in the high frequency applications.
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