Jia Xianghong, Zou Hong, Xu Feng, et al. Detector design of medium-energy electron imaging[J]. High Power Laser and Particle Beams, 2015, 27: 014005. doi: 10.11884/HPLPB201527.014005
Citation:
Jia Xianghong, Zou Hong, Xu Feng, et al. Detector design of medium-energy electron imaging[J]. High Power Laser and Particle Beams, 2015, 27: 014005. doi: 10.11884/HPLPB201527.014005
Jia Xianghong, Zou Hong, Xu Feng, et al. Detector design of medium-energy electron imaging[J]. High Power Laser and Particle Beams, 2015, 27: 014005. doi: 10.11884/HPLPB201527.014005
Citation:
Jia Xianghong, Zou Hong, Xu Feng, et al. Detector design of medium-energy electron imaging[J]. High Power Laser and Particle Beams, 2015, 27: 014005. doi: 10.11884/HPLPB201527.014005
The mechanical structure of electronic imaging device was designed by the principle of pinhole imaging in this paper. To ensure the total dose of the probe unit was less than 5 krad in 12 years, the thickness of the shell was about 3 mm copper and the angular resolution of the probe was 20. The detector of anti-proton contamination was designed according to the law of the charged particle energy loss in silicon, the thickness of the detector and the shielding layer was determined. The thickness of the detector is 1000 m and the shielding layer thickness is 10 m (equivalent silicon). By calculation, the design of the electronic imager probe meets the needs of medium-energy electronic detection in space, and lays the foundation for the development of medium-energy electronic imager.