Modeling and simulation on film bulk acoustic resonator with silicon oxide temperature-compensated layer

Gao Yang; Zhou Bin; He Yi; He Wanjing

doi:10.11884/HPLPB201527.014103

Volume 27 Issue 01

Jan. 2015

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Article Navigation > High Power Laser and Particle Beams > 2015 > 27(01): 014103

Yang Hao, Le Bo, Yan Eryan, et al. Analysis and calculation of damping used in random coupling model[J]. High Power Laser and Particle Beams, 2017, 29: 103202. doi: 10.11884/HPLPB201729.170152

Citation:

Gao Yang, Zhou Bin, He Yi, et al. Modeling and simulation on film bulk acoustic resonator with silicon oxide temperature-compensated layer[J]. High Power Laser and Particle Beams, 2015, 27: 014103. doi: 10.11884/HPLPB201527.014103

Yang Hao, Le Bo, Yan Eryan, et al. Analysis and calculation of damping used in random coupling model[J]. High Power Laser and Particle Beams, 2017, 29: 103202. doi: 10.11884/HPLPB201729.170152

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Modeling and simulation on film bulk acoustic resonator with silicon oxide temperature-compensated layer

doi: 10.11884/HPLPB201527.014103

Gao Yang^{1
,
,},
Zhou Bin²,
He Yi²,
He Wanjing³

1.
Institute of Electronic Engineering,CAEP,P.O.Box 919-512,Mianyang 621900,China;
2.
School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China;
3.
State Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology,Chongqing University,Chongqing 400044,China

Received Date: 2014-10-23
Rev Recd Date: 2014-12-22
Publish Date: 2015-01-20

Abstract

Abstract

The property of temperature-frequency drift has an effect on the passband ripples, center frequency and insertion loss of film bulk acoustic resonator (FBAR) filters, reducing the reliability of its electrical application. A temperature-frequency drift simulation of a typical Mo/AlN/Mo 3-layered FBAR is achieved using finite element analysis software ANSYS, and the simulated temperature coefficient of frequency is about －3510－6/℃ within the temperature range ［－50 ℃, 150 ℃］. By adding a SiO2 temperature compensated layer with positive temperature coefficient in the FBAR stacked films structure, the effects of the compensated layer thickness on temperature-frequency drift, resonant frequency and electromechanical coupling are analyzed. The simulated temperature-frequency coefficient of the FBAR stack with a SiO2 temperature compensated layer, which is composed of Mo/AlN/SiO2/Mo multi-layer films, is about 0.87210－6/℃, which shows significantly improved temperature stability compared to that without the temperature compensated layer.
- radio frequency micro-electro-mechanical system,
- film bulk acoustic resonator,
- frequency drift,
- temperature coefficient,
- stability,
- finite element analysis

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