Yang Jie, Chen Guangyan, Wang Xuguang, et al. Effect of post-annealing on the structure and piezoelectric properties of ZnO/Au films[J]. High Power Laser and Particle Beams, 2015, 27: 024133. doi: 10.11884/HPLPB201527.024133
Citation:
Yang Jie, Chen Guangyan, Wang Xuguang, et al. Effect of post-annealing on the structure and piezoelectric properties of ZnO/Au films[J]. High Power Laser and Particle Beams, 2015, 27: 024133. doi: 10.11884/HPLPB201527.024133
Yang Jie, Chen Guangyan, Wang Xuguang, et al. Effect of post-annealing on the structure and piezoelectric properties of ZnO/Au films[J]. High Power Laser and Particle Beams, 2015, 27: 024133. doi: 10.11884/HPLPB201527.024133
Citation:
Yang Jie, Chen Guangyan, Wang Xuguang, et al. Effect of post-annealing on the structure and piezoelectric properties of ZnO/Au films[J]. High Power Laser and Particle Beams, 2015, 27: 024133. doi: 10.11884/HPLPB201527.024133
ZnO/Au films were deposited on oxidized silicon substrate by RF reactive sputtering technique and treated under various post-annealing atmospheres. X-ray diffraction (XRD), optical microscopy, field emission scanning electron microscope (FESEM) and piezometer were employed to analyze the effect of post-annealing on the structure and piezoelectric properties of ZnO/Au thin films. Crystalline qualities of ZnO/Au films were improved by post-annealing especially after careful annealing in nitrogen atmosphere. But piezoelectric parameters d33 and d15 decreased after having annealed. The Au atomic migration under high annealing temperature was considered as the reason that exacerbated the piezoelectric properties of ZnO/Au films.
DownLoad: