Microstructuring and doping of monocrystalline silicon with femtosecond and nanosecond laser pulses

Wen Cai; Li Xiaohong; He Xiaoqing; Duan Xiaofeng; Qiu Rong; Liu Dexiong; Tang Jinlong; Hu Sifu

doi:10.11884/HPLPB201527.024143

Volume 27 Issue 02

Jan. 2015

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Article Navigation > High Power Laser and Particle Beams > 2015 > 27(02): 024143

Zheng Zheng, Li Hui, Mei Qiliang. Research on in-core special material heating rate calculation[J]. High Power Laser and Particle Beams, 2017, 29: 016019. doi: 10.11884/HPLPB201729.160334

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Wen Cai, Li Xiaohong, He Xiaoqing, et al. Microstructuring and doping of monocrystalline silicon with femtosecond and nanosecond laser pulses[J]. High Power Laser and Particle Beams, 2015, 27: 024143. doi: 10.11884/HPLPB201527.024143

Zheng Zheng, Li Hui, Mei Qiliang. Research on in-core special material heating rate calculation[J]. High Power Laser and Particle Beams, 2017, 29: 016019. doi: 10.11884/HPLPB201729.160334

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Microstructuring and doping of monocrystalline silicon with femtosecond and nanosecond laser pulses

doi: 10.11884/HPLPB201527.024143

1.
School of Science,Joint Laboratory for Extreme Conditions Matter Properties,Southwest University of Science and Technology,Mianyang 621010,China;
2.
Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;
3.
School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

Received Date: 2014-09-24
Rev Recd Date: 2014-11-02
Publish Date: 2015-01-27

Abstract

Abstract

Monocrystalline silicon (c-Si) surfaces were microstructured and hyperdoped in SF6 atmosphere using femtosecond(fs) Ti:sapphire and nanosecond(ns) Nd:yttrium-aluminum-garnet laser pulses, respectively, for photovoltaic applications. The obtained microstructures were studied with respect to surface morphology, crystallinity, concentration and distribution of sulfur impurities. The experimental results indicate that the ns-laser microstructured silicon has a lower sheet resistance, a lower defect density (i.e., higher crystallinity) and a higher concentration of sulfur impurities distribution over a larger surface area and depth (about 1 m). In addition, its absorbance can reach about 80% from the visible region to the near-infrared spectral region. With the better performance of ns-laser treated silicon, solar cells with an active area of 8 cm2 were manufactured on the samples. The series resistance, open-circuit voltage, short-circuit current density, and conversion efficiency of the best solar cell are 0.5 , 503 mV, 35 mA/cm2, and about 12%, respectively. And these can be further improved by manufacturing process optimization.
- silicon,
- femtosecond laser pulse,
- nanosecond laser pulse,
- microstructuring,
- doping,
- solar cells

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