Modified Keating model for dynamic characteristics of silicon nanobeam

Zhang Zhibin; Yu Hong; Zhang Peng; Chen Hongbo

doi:10.11884/HPLPB201527.024149

Volume 27 Issue 02

Jan. 2015

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Article Navigation > High Power Laser and Particle Beams > 2015 > 27(02): 024149

Zhang Xue, Xu Qiang, Wang Yong, et al. Multipactor phenomenon of high-power pill-box window[J]. High Power Laser and Particle Beams, 2016, 28: 023004. doi: 10.11884/HPLPB201628.023004

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Zhang Zhibin, Yu Hong, Zhang Peng, et al. Modified Keating model for dynamic characteristics of silicon nanobeam[J]. High Power Laser and Particle Beams, 2015, 27: 024149. doi: 10.11884/HPLPB201527.024149

Zhang Xue, Xu Qiang, Wang Yong, et al. Multipactor phenomenon of high-power pill-box window[J]. High Power Laser and Particle Beams, 2016, 28: 023004. doi: 10.11884/HPLPB201628.023004

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Modified Keating model for dynamic characteristics of silicon nanobeam

doi: 10.11884/HPLPB201527.024149

1.
Key Laboratory of MEMS of Ministry of Education,Southeast University,Nanjing 210096,China

Received Date: 2014-09-18
Rev Recd Date: 2014-10-24
Publish Date: 2015-01-27

Abstract

Abstract

A new semicontinuum model is presented to analyze the dynamic characteristics of silicon nanobeam in this paper. Compared with tradition continuum theory, the new model utilizes the Keating potential and accounts for the discrete nature in the thickness and width directions of the nanobeam. Referring to Sun-Zhang model and using energy conservation theory, the modified Keating model is built. Then the fundamental frequencies of nanoscale clamped-clamped silicon beam are calculated, and the surface effect is considered into the calculation. It is shown that the results based on the new model coincide well either with the results using Material StudioTM software in nano-size or with those based on the continuum model in micro-size. Meanwhile, the model can reflect the fundamental frequency changing with the width, it also accords with the actual experiment.
- semicontinuum theory,
- Keating potential,
- surface relaxation,
- fundamental frequency

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