Pulsed bias application on X-ray diodes

Hou Lifei; Du Huabing; Cui Yanli; Yang Yimeng; Wei Minxi; Yi Tao; Yuan Zheng; Chen Tao; Dou Yanjuan; Yang Guohong; Liu Shenye; Yang Jiamin; Jiang Shaoen

doi:10.11884/HPLPB201527.032020

Volume 27 Issue 03

Mar. 2015

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Hou Lifei, Du Huabing, Cui Yanli, et al. Pulsed bias application on X-ray diodes[J]. High Power Laser and Particle Beams, 2015, 27: 032020. doi: 10.11884/HPLPB201527.032020

Citation:

Hou Lifei, Du Huabing, Cui Yanli, et al. Pulsed bias application on X-ray diodes[J]. High Power Laser and Particle Beams, 2015, 27: 032020. doi: 10.11884/HPLPB201527.032020

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Pulsed bias application on X-ray diodes

doi: 10.11884/HPLPB201527.032020

1.
Research Center of Laser Fusion,CAEP,P.O.Box 919-986,Mianyang 621900,China;
2.
Institute of Applied Electronics,CAEP,Mianyang 621900,China

Received Date: 2014-06-09
Rev Recd Date: 2014-12-16
Publish Date: 2015-02-10

Abstract

Abstract

With the safety requirements of detectors in the gas hohlraum experiments, a technique of pulsed bias application on X-ray diodes is studied preliminarily. A new synchronization method is presented based on the signal generator and the 8 ps laser equipment. And the technology of X-ray diodes with pulsed bias is proved by experiments on the laser equipment. The differences of rising time and FWHM between the detector with DC and pulsed bias voltage are no more than 10%. Temporal performances of X-ray diodes with pulsed bias are in agreement with one of diodes with DC bias. The results show that application of pulsed bias on X-Ray Diodes is technically feasible. The main requirements of pulsed high-voltage power, is given at the end. The pulse width should be 110 s and the time when the voltage is unloaded should be 2.11 ns after zero time.
- X-ray diode,
- pulsed bias,
- time synchronization,
- temporal performances

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