Phase transition properties of vanadium oxide thin films irradiated by nanosecond laser

Li Hongzhe; Sheng Chuanxiang; Li Shenbo; Gu Guohua; Ren Kan; Chen Qian; He Weiji; Yuan Guoliang

doi:10.11884/HPLPB201527.059001

Volume 27 Issue 05

Apr. 2015

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Li Hongzhe, Sheng Chuanxiang, Li Shenbo, et al. Phase transition properties of vanadium oxide thin films irradiated by nanosecond laser[J]. High Power Laser and Particle Beams, 2015, 27: 059001. doi: 10.11884/HPLPB201527.059001

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Phase transition properties of vanadium oxide thin films irradiated by nanosecond laser

doi: 10.11884/HPLPB201527.059001

1.
Jiangsu Key Laboratory of Spectral Imaging &Intelligence Sense,Nanjing University of Science and Technology,Nanjing 210094,China;
2.
School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing 210094,China

Received Date: 2014-07-24
Rev Recd Date: 2015-01-28
Publish Date: 2015-04-24

Abstract

Abstract

Vanadium oxide (VO2) thin films were successfully deposited using pulsed laser deposition (PLD) method. The samples were identified as polycrystalline thin films by analysis of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) . Phase transition properties of VO2 films irradiated by nanosecond laser were investigated by pump-probe technique. The results show that the minimum response time is 12 ns at repetition rate of 160 Hz. Moreover, the recovery time of phase transition varies with laser energy according to natural exponential law. Our simulation results suggest that the recovery time of phase transition correlates with thermal conductivity and thermal diffusion coefficient of substrates for the same laser energy.
- vanadium oxide,
- pulsed laser deposition,
- optical switch,
- response of phase transition

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