High power high beam quality in-band pumping picosecond amplification laser system

Mao Xiaojie; Bi Guojiang; Pang Qingsheng; Zou Yue; Lü Huachang

doi:10.11884/HPLPB201527.061001

Volume 27 Issue 06

May 2015

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Article Navigation > High Power Laser and Particle Beams > 2015 > 27(06): 061001

Hao Yong, Li Yongdong, Ding Zhenjie, et al. Pre-pulse mechanism and effects of parameters in semiconductor opening switches[J]. High Power Laser and Particle Beams, 2018, 30: 065001. doi: 10.11884/HPLPB201830.170516

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Mao Xiaojie, Bi Guojiang, Pang Qingsheng, et al. High power high beam quality in-band pumping picosecond amplification laser system[J]. High Power Laser and Particle Beams, 2015, 27: 061001. doi: 10.11884/HPLPB201527.061001

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High power high beam quality in-band pumping picosecond amplification laser system

doi: 10.11884/HPLPB201527.061001

1.
Science and Technology on Solid-State Laser Labotatory,North China Research Institute of Electro-Optics,Beijing 100015,China

Received Date: 2014-12-11
Rev Recd Date: 2015-03-06
Publish Date: 2015-05-26

Abstract

Abstract

The INNOSLAB in-band pumping picosecond amplification laser system is studied with flake Nd: YVO4 crystal. A new method for mode-matching was demonstrated to simplify the amplifier design, integrating the benefits of the in-band pumping technique and the excellent thermal management of the INNOSLAB amplifier design. As a result, an average of 60.7 W, pulse width of 16.8 ps, repetition frequency of 20 MHz laser was achieved with optic to optic efficiency of 25.3%. The beam quality of 1.55 was obtained with 50 W output laser.
- solid state laser,
- picosecond amplifier,
- in-band pumping,
- high beam quality

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