Research on electrical crosstalk of CMOS array

Lai Liping; Luo Fu; Zhang Rongzhu

doi:10.11884/HPLPB201527.061019

Volume 27 Issue 06

May 2015

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Article Navigation > High Power Laser and Particle Beams > 2015 > 27(06): 061019

Jia Wei, Chen Zhiqiang, Guo Fan, et al. Drivers of small and medium scale electromagnetic pulse simulator based on Marx generator[J]. High Power Laser and Particle Beams, 2018, 30: 073203. doi: 10.11884/HPLPB201830.170401

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Lai Liping, Luo Fu, Zhang Rongzhu. Research on electrical crosstalk of CMOS array[J]. High Power Laser and Particle Beams, 2015, 27: 061019. doi: 10.11884/HPLPB201527.061019

Citation:

Lai Liping, Luo Fu, Zhang Rongzhu. Research on electrical crosstalk of CMOS array[J]. High Power Laser and Particle Beams, 2015, 27: 061019. doi: 10.11884/HPLPB201527.061019

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Research on electrical crosstalk of CMOS array

doi: 10.11884/HPLPB201527.061019

1.
School of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China;
2.
Institute of Fluid Physics,CAEP,Mianyang 621900,China

Received Date: 2015-01-14
Rev Recd Date: 2015-04-02
Publish Date: 2015-05-26

Abstract

Abstract

Crosstalk is the key parameter affecting the imaging quality of CMOS array detector in imaging applications. In order to understand the impact of crosstalk on the response of devices, the characteristics of electrical crosstalk of the CMOS image sensors are analyzed. The mathematical analysis model of the electrical crosstalk is established, and the amplitude of electrical crosstalk is calculated. The effects of parameters (including diffusion length, active area, depletion depth, pixel size and temperature) on the electrical crosstalk are studied. The results show that active area, depletion depth and pixel size have a bigger impact on electrical crosstalk compared with diffusion length and temperature. When the active area changes from 3.8 m2 up to 12.8 m2, the electrical crosstalk reduces about 13%; the change of pixel size, from 7 m7 m to 15 m15 m, makes it increase by 95.4%; and the temperature rises from 100 K to 180 K, the electrical crosstalk decreases by 0.6%.
- array detector,
- CMOS image sensors,
- electrical crosstalk,
- active area

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