Volume 27 Issue 06
May  2015
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Article Navigation >  High Power Laser and Particle Beams  > 2015  >  27(06): 061019
Liang Zhenhe, Zhou Changlin, Yu Daojie, et al. Analysis and measurement of temperature effect on electromagnetic susceptibility of embedded ADC[J]. High Power Laser and Particle Beams, 2017, 29: 053002. doi: 10.11884/HPLPB201729.170024
Citation: Lai Liping, Luo Fu, Zhang Rongzhu. Research on electrical crosstalk of CMOS array[J]. High Power Laser and Particle Beams, 2015, 27: 061019. doi: 10.11884/HPLPB201527.061019
shu

Research on electrical crosstalk of CMOS array

doi: 10.11884/HPLPB201527.061019
  • 1.

    School of Electronics and Information Engineering,Sichuan University,Chengdu 610064,China;

  • 2.

    Institute of Fluid Physics,CAEP,Mianyang 621900,China

  • Received Date: 2015-01-14
  • Rev Recd Date: 2015-04-02
  • Publish Date: 2015-05-26
    Abstract
  • Crosstalk is the key parameter affecting the imaging quality of CMOS array detector in imaging applications. In order to understand the impact of crosstalk on the response of devices, the characteristics of electrical crosstalk of the CMOS image sensors are analyzed. The mathematical analysis model of the electrical crosstalk is established, and the amplitude of electrical crosstalk is calculated. The effects of parameters (including diffusion length, active area, depletion depth, pixel size and temperature) on the electrical crosstalk are studied. The results show that active area, depletion depth and pixel size have a bigger impact on electrical crosstalk compared with diffusion length and temperature. When the active area changes from 3.8 m2 up to 12.8 m2, the electrical crosstalk reduces about 13%; the change of pixel size, from 7 m7 m to 15 m15 m, makes it increase by 95.4%; and the temperature rises from 100 K to 180 K, the electrical crosstalk decreases by 0.6%.
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